Results forbuying office in textilefrom 1090 Products.
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IRFP140NPBF MOSFET Power Electronics High Efficiency Switching Device for Maximum Power Transfer Features: • N-Channel • VDSS = 100V • ID = 18A • RDS(on) = 0.02Ω • Package = TO...
china
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IRFR4104TRPBF MOSFET Power Electronics High Voltage and High Efficiency Switching Product Listing: IRFR4104TRPBF - N-Channel MOSFET Parameters: VDS (Max): 100V VGS: ±20V RDS (on): ...
china
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IRF7317TRPBF MOSFET Power Electronics High-Performance Low-Power Solution for Optimal Efficiency IRF7317TRPBF - N-Channel MOSFET Product Type: N-Channel MOSFET Package Type: TO-220 ...
china
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Product descripition: 1. Type: MOSFET Transistor 2. Part Number: IRLR2905TRPBF 3. Package Type: TO-220 4. Configuration: Single 5. Voltage: 100V 6. Current: 8A 7. Power Dissipation...
china
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IRLML9301TRPBF Low On Resistance MOSFET Power Electronics for High Efficiency Applications Parameters: - Operating Voltage: -20V to -60V - Drain Current: -3A - On Resistance: 0...
china
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Product descripition: 1. Drain Source Voltage: 100V 2. Continuous Drain Current: 4.5A 3. Drain Source On-Resistance: 4.5mΩ 4. Operating Temperature Range: -55°C to 150°C 5. RDS(ON) ...
china
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Product Description: 1. High voltage capability up to 500V 2. High speed switching 3. Low power dissipation 4. Low input current 5. Output current up to 500mA 6. Under voltage ...
china
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Product Description: -60V Drain-Source Breakdown Voltage -17.5A Continuous Drain Current at 25°C -230mΩ RDS(on) -Low Gate Charge -Fast Switching -Enhanced D-S Diodes -High Power ...
china
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Product Descriptions: 1. Low RDS (on) and Qg enable high efficiency 2. Low input capacitance 3. Ease of paralleling 4. AEC-Q101 qualified 5. Halogen free, RoHS compliant package 6. ...
china
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Product Description: 1. High-Speed Switching. 2. Low On-Resistance. 3. Low Input Capacitance. 4. Low Input and Output Leakage Currents. 5. Low Gate Charge. 6. High Current and ...
china
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BSC010N04LS MOSFET Power Electronics High Performance Low On Resistance Ultra Low Gate Charge Package: TO-252 Drain to Source Voltage (Vdss): 40V Gate to Source Voltage (Vgs): ±20V ...
china
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Product Description: - Advanced Trench Technology - Low On-Resistance - High Efficiency Performance - Improved Gate Charge Characteristics - Low Gate Input Threshold Voltage - High ...
china
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IPD65R600C6 MOSFET Power Electronics High Efficiency High Power Low Losses Product Parameters: • Drain-Source Voltage: 600V • Continuous Drain Current: 65A • Channel Temperature: ...
china
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Product Description: 1. 100V N-Channel Power MOSFET 2. Logic Level Gate Drive 3. RDS(on) = 0.16Ω 4. 70A, 7.3mΩ drain source on-resistance 5. Optimized gate charge for high ...
china
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Product Description: 1. High speed switching 2. Low gate charge 3. Low on-state resistance 4. 100% avalanche tested 5. 175°C operating temperature 6. RoHS compliant and 100% lead...
china
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IRFS7434TRL7PP MOSFET Power Electronics High Power High Efficiency N Channel MOSFET Package: TO-220 Configuration: Single N-channel Drain-Source Voltage: 50V Gate-Source Voltage: ...
china
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IRFH5250TRPBF - N-Channel Power MOSFET Product Features: • High Peak Drain Current • Low On-Resistance • Low Threshold Voltage • Fast Switching Speed • Operating Temperature: -55°C ...
china
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Product Name: IRF7853TRPBF Type: MOSFET Key Features: • Logic Level Gate • Fast Switching Speed • Low On-Resistance • Low Gate Charge • Avalanche Rated • RoHS Compliant • High ...
china
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Product Listing: IRF7832TRPBF MOSFET Product Type: MOSFET Brand: IRF Model: IRF7832TRPBF Package: TO-263 VDS(V): 30V ID (A): -3A RDS(on)(Ω): 0.04Ω VGS (V): -20V Pd (W): 1.2W Qg ...
china
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SI2305CDS-T1-GE3 N-Channel MOSFET Power Transistor for High-Speed Switching Applications Product Features: • N-Channel MOSFET • 30V drain-source voltage • 0.005Ω maximum on-state ...
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