Results forbts780gp infineon technologies agfrom 9133 Products.
|
|
Product Details General Device Information The XC226x derivatives are high-performance members of the Infineon XC2000 Family of full featured single-chip CMOS microcontrollers. ...
china
|
|
|
|
|
IPD530N15N3GATMA1 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C ...
china
|
|
|
|
|
Product Details Introduction The C161K/O is a derivative of the Infineon C166 Family of full featured single-chip CMOS microcontrollers. It combines high CPU performance (up to 12...
china
|
|
|
|
|
IPD65R400CEAUMA1 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 15...
china
|
|
|
|
|
Product Details The XMC4500 devices are members of the XMC4000 Family of microcontrollers based on the ARM Cortex-M4 processor core. The XMC4000 is a family of high performance and ...
china
|
|
|
|
|
IPP60R099CPAAKSA1 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C ...
china
|
|
|
|
|
Product Details PNP Epitaxial Planar Silicon Transistor Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • ...
china
|
|
|
|
|
IPD65R650CEAUMA1 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 7A ...
china
|
|
|
|
|
Product Details The XMC4500 devices are members of the XMC4000 Family of microcontrollers based on the ARM Cortex-M4 processor core. The XMC4000 is a family of high performance and ...
china
|
|
|
|
|
IPP045N10N3GHKSA1 Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C ...
china
|
|
|
|
|
Product Details PNP Epitaxial Planar Silicon Transistor Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • ...
china
|
|
|
|
|
IPP200N15N3GHKSA1 Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C ...
china
|
|
|
|
|
Specifications Attribute Attribute Value Manufacturer Infineon Product Category Linear Voltage Regulators Series Automotive AEC-Q100 OPTIREG™ Operating-Temperature -40°C ~ 150°C ...
china
|
|
|
|
|
The IRF640NPBF is a reliable and high-performance N-channel power MOSFET that is well-suited for use in a wide range of power applications. Its low on-state resistance, fast ...
china
|
|
|
|
|
Specifications Attribute Attribute Value Manufacturer Infineon Product Category Linear Voltage Regulators Series Automotive, AEC-Q100 Packaging Alternate Packaging Package-Case 8...
china
|
|
|
|
|
The IRFB4115PBF is a high-performance power MOSFET transistor that offers low on-resistance, fast switching speed, and built-in protection features. It is an excellent choice for ...
china
|
|
|
|
|
Product Details 1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The ...
china
|
|
|
|
|
The IRFB7530PBF is a high-performance power MOSFET transistor that offers low on-resistance, fast switching speed, and built-in protection features. It is an excellent choice for ...
china
|
|
|
|
|
The IRFB4321PBF is a high-performance power MOSFET transistor that offers low on-resistance, fast switching speed, and built-in protection features. It is an excellent choice for ...
china
|
|
|
|
|
The IRFB4110PBF is a high-performance power MOSFET transistor that offers low on-resistance, high current capability, fast switching speed, and built-in protection features, making ...
china
|
|
|
