Home Products Home & Garden Baby Supplies & Products

bipolar junction transistor sot 323

Refine Search
Results forbipolar junction transistor sot 323from 26016 Products.
Advanced Process Technology Long Life Cigarette Maker Transistor MK9 A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. ...
HongKong, china
Verified
G40H65DFB OR G40H65DFB2 G40H65DFBZ G40HP65FB TO-247 POWER IGBT TRANSISTOR 10PIECES/LOT ORIGINAL NEW STGWA40H65DFB Product Attribute Attribute Value Select Attribute Manufacturer: ...
china
Verified
Product Detail Packaging Bulk Part Status Obsolete Transistor Type NPN Current - Collector (Ic) (Max) 6A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, ...
Verified
MOSFET Transistors TO-3P TIP147 10A 100V PNP Darlington Bipolar Power Transistor TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactur...
Guangdong, china
Member
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
Guangdong, china
Member
L78L18ACUTR SOT-89-3 Linear voltage stabilizer (LDO) Description The L78L series of three-terminal positive regulators employ internal current limiting and thermal shutdown, making ...
china
Verified
Brand New Silicon Transistor D2PAK Electric MK9 Cigarette Machine Parts A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. ...
HongKong, china
Verified
Product Detail Packaging Bulk Part Status Obsolete Transistor Type NPN Current - Collector (Ic) (Max) 6A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, ...
Verified
MMBD4148A/SE/CC/CA SWITCHING DIODE SOT-23 Plastic-Encapsulated Diodes FEATURE Fast Switching Speed For General Purpose Switching Applications High Conductance Marking MAXIMUM ...
Guangdong, china
Member
FDC653N MOSFET Power Electronics N-Channel Enhancement Mode Transistor SOT-23-6 Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V ...
china
Verified
Product Description Product Detail Packaging Tube Part Status Active Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) ...
Verified
SOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET Product Summary VDSS= V ID= 3.0 A 60 RDS(on) 120mΩ@ 10 V < VGS = RDS(on) < 136mΩ@VGS = 4.5V FEATURE  High power and ...
Guangdong, china
Member
FDN304P MOSFET Power Electronics N-Channel Enhancement Mode Transistor SOT-23-6 High Speed Switching Applications FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source ...
china
Verified
Product Description Product Detail Packaging Bulk Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 20A Voltage - Collector Emitter Breakdown (Max) 50V Vce ...
Verified
SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET Power ...
Guangdong, china
Member
Product Description Product Detail Packaging Bulk Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 50V Vce ...
Verified
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
Guangdong, china
Verified
MMBD4148A/SE/CC/CA SWITCHING DIODE SOT-23 Plastic-Encapsulated Diodes FEATURE Fast Switching Speed For General Purpose Switching Applications High Conductance Marking MAXIMUM ...
Guangdong, china
Verified
SOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET Product Summary VDSS= V ID= 3.0 A 60 RDS(on) 120mΩ@ 10 V < VGS = RDS(on) < 136mΩ@VGS = 4.5V FEATURE  High power and ...
Guangdong, china
Verified
SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET Power ...
Guangdong, china
Verified
Page 8 of 50 |< << 4 5 6 7 8 9 10 11 12 >> >|