BGS8M2 RF Amplifier Integrated Circuit Chip 1.8GHz ~ 2.2GHz 6-XSON 1.1x0.7

BGS8M2 RF Amplifier Integrated Circuit Chip 1.8GHz ~ 2.2GHz 6-XSON (1.1x0.7)

BGS8M2 IC RF AMP 1.8GHZ-2.2GHZ 6XSON

Specifications of BGS8M2/BGS8M2X

 
Features of BGS8M2/BGS8M2X

• Operating frequency from 1805 MHz to 2200 MHz
• Noise figure = 0.85 dB
• Gain 14.4 dB
• High input 1 dB compression point of -3.5 dBm
• Bypass switch insertion loss of 2.2 dB
• High in band IP3i of 3.5 dBm
• Supply voltage 1.5 V to 3.1 V
• Self-shielding package concept
• Integrated supply decoupling capacitor
• Optimized performance at a supply current of 5.8 mA
• Power-down mode current consumption < 1 µA
• Integrated temperature stabilized bias for easy design
• Require only one input matching inductor
• Input and output DC decoupled
• ESD protection on all pins (HBM > 2 kV)
• Integrated matching for the output
• Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch:SOT1232
• 180 GHz transit frequency - SiGe:C technology
• Moisture sensitivity level 1

Applications of BGS8M2/BGS8M2X

• LNA for LTE reception in smart phones
• Feature phones
• Tablet PCs
• RF front-end modules

Environmental & Export Classifications of BGS8M2/BGS8M2X