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33a mosfet transistors

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Product Description: Embedded FRD High Voltage MOSFET is a new type of power semiconductor device that is designed to provide superior performance in high-voltage and high...
Guangdong, china
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High Voltage MOSFET with Great Heat Dissipation for Technology Applications *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line...
Guangdong, china
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Ultra-High Voltage N MOSFET with Great Heat Dissipation *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; ...
Guangdong, china
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Low Power Loss SGT Process Application Low Rds(ON) Energy Storage Field Effect Transistor *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%...
Guangdong, china
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Low Rds(ON) Trench/SGT MOSFET with High EAS Capability *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit...
Guangdong, china
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5G Base Station Low Voltage MOSFET with SGT Process Low Power Loss *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: ...
Guangdong, china
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Low Power Loss Trench Process MOSFET with High EAS Capability and Smaller RSP *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body ...
Guangdong, china
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NVMTS1D2N08H 80V 337A 1.1mOhms DFNW-8 AEC-Q101 N-Channel MOSFET Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and ...
Guangdong, china
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Product Description: The Low Voltage MOSFET is a state-of-the-art semiconductor device, engineered to meet the demanding requirements of modern electronic systems. Utilizing ...
Guangdong, china
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Product Description: The Low Voltage MOSFET, a pinnacle of modern semiconductor technology, stands as a testament to the incredible advancements in electronic components. Designed ...
Guangdong, china
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FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide ...
Guangdong, china
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ICs Chip IAUT260N10S5N019 N-Channel 100V 260A 300W Surface Mount Transistors Product Description Of IAUT260N10S5N019 IAUT260N10S5N019 is N-Channel 100 V 260A (Tc) 300W (Tc) Surface ...
china
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Integrated Circuit Chip NTMFS011N15MC 150V Power Single N-Channel Transistor 8PQFN​ Product Description Of NTMFS011N15MC NTMFS011N15MC is 150V, 78A Single N-Channel MOSFET ...
china
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VNH5019ATR-E Transistor Ic Chip Mtr Drv 5.5-24v Multipwrso-30 Motor Driver Power MOSFET Parallel, PWM MultiPowerSO-30 Specifications of VNH5019ATR-E TYPE DESCRIPTION Category ...
Guangdong, china
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IRFR2607ZTRPBF Transistor IC Chip N-Channel 75 V 42A PG-TO252-3-901| DPAK Features of IRFR2607ZTRPBF Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature ...
Guangdong, china
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FDD16AN08A0 Transistor IC Chip 75V 9A 50A 135W Surface Mount TO-252AA Features of FDD16AN08A0 RDS(on) = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A QG(tot) = 31 nC ( Typ.) @ VGS = 10 V ...
Guangdong, china
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FDMS8460 Transistor IC Chip N-Channel 40 V 25A 49A 2.5W 104W 8-PQFN (5x6) Features of FDMS8460 • Max rDS(on) = 2.2 m at VGS = 10 V, ID = 25 A • Max rDS(on) = 3.0 m at VGS = 4.5 V, ...
Guangdong, china
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BSS138 Transistor IC Chip 50 V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23 Features of BSS138 Advanced trench process technology High density cell design for ultra low on-resistance ...
Guangdong, china
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BSS138-7-F Transistor IC Chip N-Channel 50V 200mA 300mW Surface Mount SOT-23-3 Features of BSS138-7-F  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  ...
Guangdong, china
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BUK9Y14-40B 115 Transistor IC Chip N-Channel 40 V 56A 85W LFPAK56 Power-SO8 Features of BUK9Y14-40B „ Low conduction losses due to low on-state resistance „ Q101 compliant „ ...
Guangdong, china
Verified
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