Results for1mm diamond gan waferfrom 936 Products.
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2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview GaN has excellent material characteristics for use ...
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3003 1 mm Diamond Tread Plate embossed aluminum sheet for Construction Decoration Description Diamond plate may also be called tread plate, durbar floor plate or checker plate. ...
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Antirust Mirror Surface 1mm 3003 H112 Diamond Aluminum Sheet 6~2500mm Width Production Description Al-mn alloy 3003 is the most widely used type of anti-rust aluminum. The strength ...
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customized orientation 2inch SSP Sapphire carrier substrate chip for GaN template grow application Sapphire wafer carriers are manufactured to exacting specifications and offer a ...
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ZnO Wafer, CdS wafer, CdSe wafer, CdTe wafer, ZnS wafer, ZnSe wafer and ZnTe wafer We provides high purity single crystal ZnO wafer and ZnO bulk for power device , LED , sensor and ...
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Special Orientation SSP/ DSP A-axis <11-20> R-axis <1-102> M-axis<10-10> 2inch 3inch 4inch 6inch sapphire substrates wafers for GaN epitaxial growth；0.1mm/100um 2inch sapphire c...
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CVD Diamond Flwaless Seeds Cvd Diamond Wafer 15 X 15 Cvd Wafer Specification: Product name cvd diamond flwaless seeds cvd diamond wafer 15 x 15 cvd wafer Usage Optical part and ...
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanicall...
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2inch ,4inch Gallium Nitride AlN template wafer on sapphire or sic substrates,HVPE Gallium Nitride wafer,AlN templates III-Nitride(GaN,AlN,InN) Forbidden band width (light emitting ...
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ZnO Wafer, CdS wafer, CdSe wafer, CdTe wafer, ZnS wafer, ZnSe wafer and ZnTe wafer We provides high purity single crystal ZnO wafer and ZnO bulk for power device , LED , sensor and ...
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Special Orientation SSP/ DSP A-axis <11-20> R-axis <1-102> M-axis<10-10> 2inch 3inch 4inch 6inch sapphire substrates wafers for GaN epitaxial growth；0.1mm/100um 2inch sapphire c...
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Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of ...
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C-axis (0001) orientation 12inch diameter 300mm with notch DSP Sapphire Substrate wafers thickness 1.5mm C-a Special Orientation SSP/ DSP A-axis <11-20> R-axis <1-102> M-axis<10-10...
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5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms ...
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5*10.5mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Generative adversarial networks (GANs) are ...
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview A generative adversarial ...
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10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview The features are high crystalline, good uniformity, ...
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices To reduce the Fe trapping carrier and the sheet resistances of the two...
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10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview Premium quality GaN crystal substrates with low ...
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be ...
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