Results for150v pnp epitaxial silicon transistorfrom 8491 Products.
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2inch Green-LED GaN on silicon wafer Overview Gallium Nitride is a semiconductor technology used for high power, high-frequency semiconductor applications. Gallium Nitride exhibits ...
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8INCH 12INCH 6INCH GAN-ON-SI EPI-WAFERS FOR FOR POWER RF Micro-LED application 8inch 100mm 150mm 200mm 300mm GAN-ON-SI EPI-WAFERS For Power Application GaN epitaxial wafer (GaN EPI ...
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Etching Tray Semiconductor Consumables Main features The etching tray is made of high purity sintered silicon carbide ceramics without pressure.It has the characteristics of high ...
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CGHV35060MP Specifications Part Status Active Transistor Type HEMT Frequency 2.7GHz ~ 3.5GHz Gain 14.5dB Voltage - Test 50V Current Rating - Noise Figure - Current - Test 125mA ...
china
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M Face Free-Standing GaN Substrates Front Surface Roughness < 0.2 Nm (Polished) Or < 0.3 nm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity ...
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AlN on Diamond template wafers AlN epitaxial films on Diamond substrate AlN on Sapphire /AlN-on-SiC/ AlN-ON Silicon Aluminum nitride (AlN) is one of the few non-metallic materials ...
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ARF466BG Specifications Part Status Active Transistor Type N-Channel Frequency 40.68MHz Gain 16dB Voltage - Test 150V Current Rating 13A Noise Figure - Current - Test - Power - ...
china
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6inch 4H-SiC substrate N-Type D Grade 350.0±25.0μm MPD≤5/cm2 Resistivity 0.014Ω•cm—0.028Ω•cm for power and microwave devices Overview Silicon Carbide (SiC) is a covalent network ...
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CLF1G0035S-50,112 Specifications Part Status Active Transistor Type HEMT Frequency 3GHz Gain 11.5dB Voltage - Test 50V Current Rating - Noise Figure - Current - Test 150mA Power - ...
china
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CLF1G0060S-30U Specifications Part Status Active Transistor Type HEMT Frequency 3GHz ~ 3.5GHz Gain 13dB Voltage - Test 50V Current Rating - Noise Figure - Current - Test 70mA Power ...
china
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CGHV60075D5 Specifications Part Status Active Transistor Type HEMT Frequency 6GHz Gain 17dB Voltage - Test 50V Current Rating - Noise Figure - Current - Test 125mA Power - Output ...
china
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CGHV60040D Specifications Part Status Active Transistor Type HEMT Frequency 6GHz Gain 17dB Voltage - Test 50V Current Rating - Noise Figure - Current - Test 65mA Power - Output 40W ...
china
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CLF1G0060-10U Specifications Part Status Active Transistor Type HEMT Frequency 3GHz ~ 3.5GHz Gain 14.5dB Voltage - Test 50V Current Rating - Noise Figure - Current - Test 50mA ...
china
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CLF1G0035-50,112 Specifications Part Status Active Transistor Type HEMT Frequency 3GHz Gain 11.5dB Voltage - Test 50V Current Rating - Noise Figure - Current - Test 150mA Power - ...
china
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ARF448BG Specifications Part Status Active Transistor Type N-Channel Frequency 40.68MHz Gain 15dB Voltage - Test 150V Current Rating 15A Noise Figure - Current - Test - Power - ...
china
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CGHV40320D Specifications Part Status Active Transistor Type HEMT Frequency 4GHz Gain 19dB Voltage - Test 50V Current Rating - Noise Figure - Current - Test 500mA Power - Output ...
china
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ARF476FL Specifications Part Status Active Transistor Type 2 N-Channel (Dual) Common Source Frequency 128MHz Gain 16dB Voltage - Test 150V Current Rating 10A Noise Figure - Current ...
china
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ARF477FL Specifications Part Status Active Transistor Type 2 N-Channel (Dual) Common Source Frequency 65MHz Gain 16dB Voltage - Test 150V Current Rating 15A Noise Figure - Current ...
china
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CLF1G0060-30U Specifications Part Status Active Transistor Type HEMT Frequency 3GHz ~ 3.5GHz Gain 13dB Voltage - Test 50V Current Rating - Noise Figure - Current - Test 70mA Power ...
china
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CGHV60170D Specifications Part Status Active Transistor Type HEMT Frequency 6GHz Gain 17dB Voltage - Test 50V Current Rating - Noise Figure - Current - Test 260mA Power - Output ...
china
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