Results forwafer substratefrom 895 Products.
|
|
10*10.5mm2 C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high...
|
|
|
|
|
Double side polished 2inch 0.43mm thickness sapphire wafer C-axis R-axis A-axis m-plane sapphire substrate for GaN customized orientation Al2O3 single crystal wafer ,sapphire thick ...
|
|
|
|
|
10*10.5mm2 C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview We sell directly from the factory, and therefore can ...
|
|
|
|
|
12inch dia300mm 0.7mm thickness Borosilicate33 substrate glass wafers BF33 Wafers Feature Borosilicate glass is desirable due to its low Co-efficient of Thermal Expansion (CTE) ...
|
|
|
|
|
5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate ...
|
|
|
|
|
5 X 10 mm2 M Face Free-Standing GaN Substrates 350 ±25 µm TTV ≤ 10 µm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power ...
|
|
|
|
|
M Face Free-Standing GaN Substrates Front Surface Roughness < 0.2 Nm (Polished) Or < 0.3 nm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity ...
|
|
|
|
|
2 inch thick film (3,4)um AIN on sapphire wafer,DSP,XRD FWHM of(002)≤120arcsec(102) ≤450arcsec UV disinfection, LED chip AlN substrate is one of the most popular ceramic substrate ...
|
|
|
|
|
2inch GaAs (100) Undoped Substrates Overview Gallium arsenide of a GaAs Wafer has the attribute of generating laser light from electricity in a direct manner. There are two types ...
|
|
|
|
|
4-inch silicon wafer MEMS devices, integrated circuits,dedicated substrates for discrete devices A silicon wafer is a material essential for manufacturing semiconductors, which are ...
|
|
|
|
|
12-inch silicon wafer MEMS devices, integrated circuits,dedicated substrates for discrete devices Overview A silicon wafer is a material essential for manufacturing semiconductors, ...
|
|
|
|
|
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of ...
|
|
|
|
|
2inch GaAs(100) Zn-doped substrates Overview Gallium arsenide of a GaAs Wafer has the attribute of generating laser light from electricity in a direct manner. There are two types ...
|
|
|
|
|
2inch GaAs (100) Undoped Substrates Overview Gallium arsenide of a GaAs Wafer has the attribute of generating laser light from electricity in a direct manner. There are two types ...
|
|
|
|
|
2-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices Overview A silicon wafer is a material essential for manufacturing semiconductors, ...
|
|
|
|
|
JDCD08-001-005 4inch R-Plane Sapphire Substrate Wafer Sapphire's high purity and strength is an excellent and industry-accepted material for Semiconductor manufacturing. Its ...
|
|
|
|
|
5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra...
|
|
|
|
|
2-Inch Free-Standing N-GaN Substrates N Face Surface Roughness 0.5 ~1.5 μm (Single Side Polished) 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivit...
|
|
|
|
|
5*10.5mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10.5mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices ...
|
|
|
|
|
5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Different Types of Generative ...
|
|
|
You may also be interested in :
