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BLF879PS,112 Specifications Part Status Active Transistor Type LDMOS (Dual), Common Source Frequency 860MHz Gain 21dB Voltage - Test 42V Current Rating - Noise Figure - Current - ...
china
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Get Reliable Power Supply Maintenance with MMBT3904 1AM SOT23 Transistor Efficient and Durable Transistor for Switching Circuit Area with High Surge Current Capability Are you in ...
china
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DTC114YKA-T146 Pre-Biased Bipolar Transistor 50 V 100 mA 250 MHz 200 mW Specifications of DTC114YKA-T146 TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors ...
Guangdong, china
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STN0214 TRANS NPN 1200V 0.2A SOT223 Mfr STMicroelectronics Series - Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Active Transistor Type NPN Current - Collector ...
HongKong, china
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N Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = ...
china
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500mA 100V SOP16 Integrated Circuits Transistor Bipolar BJT IC Chips SN75468DR Product Description TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors - Bipolar ...
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FDS6699S transistor MOS tube N channel SOIC-8 Products Description : 1. Product Model :FDS6699S 2. Description: MOSFET 3. FDS6699S transistor MOSFET N channel 21 A 30 V 3.6 MoHM 10 ...
Guangdong, china
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Good quality Electronic Component provider from China——GS Electronics, BC817-40 - Product Details Introduction: The BC817-40 is a general-purpose NPN bipolar junction transistor ...
Guangdong, china
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BLF8G09LS-400PGWQ Specifications Part Status Active Transistor Type LDMOS (Dual), Common Source Frequency 718.5MHz ~ 725.5MHz Gain 20.6dB Voltage - Test 28V Current Rating - Noise ...
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UMZ1NTR Bipolar Transistor Array NP NPNP 50V 150mA 180MHz 140MHz 150mW Specifications of UMZ1NTR TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors Bipolar (BJT) ...
Guangdong, china
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ULN2803ADWR TRANS 8NPN DARL 50V 0.5A 18SO Category Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays Mfr Texas Instruments Series Automotive, AEC...
HongKong, china
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N Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = ...
china
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Nexperia Electronic Components Triode Transistor PMBT3904/W1A Integrated Circuits PMBT3904/W1A Specifications Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) ...
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BLF2324M8LS200PU Specifications Part Status Active Transistor Type LDMOS (Dual), Common Source Frequency 2.3GHz ~ 2.4GHz Gain 17.2dB Voltage - Test 28V Current Rating - Noise ...
china
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DTC143ZCAHZGT116 Pre-Biased Bipolar Transistor NP 100 mA 250 MHz 350 mW Specifications of DTC143ZCAHZGT116 TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors ...
Guangdong, china
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Product Range IPB017N10N5 Infineon Field Effect Transistor Semiconductors Power Mosfet Transistors MOSFET N-channel 600 V, 0.175 Ohm typ 18 A MDmesh DM2 Power MOSFET in D2PAK ...
china
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DTD113EK T146 Pre-Biased Bipolar Transistor 50 V 500 mA 200 MHz 200 mW Specifications of DTD113EK T146 TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors Bipolar ...
Guangdong, china
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Product Range STB24N60DM2 Semiconductors Power Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, ...
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