Featured Products: High Current Mosfet Power Transistor Dual N Type High Performance, 6.5A 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current, HXY9926A Logic Mosfet Switch , Mosfet Power Switch ±1.2v VGS Dual N Channel and more.
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
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| [Last Updated : 2024-04-11] |
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HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
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| [Last Updated : 2024-04-11] |
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HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages ...
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| [Last Updated : 2024-04-11] |
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
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| [Last Updated : 2024-04-11] |
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low ...
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| [Last Updated : 2024-04-11] |
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Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor High Voltage Mosfet Transistor Working and Characteristics The construction of the power MOSFET is in V...
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| [Last Updated : 2024-04-11] |
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MCU 24MHz, 8-Bit MCU LQFP-64 STM8S208R8T6 Suitable for smart door lock and fingerprint lock scheme STM8S207R8T6 STM8S207RBT6 STM8S208R8T6 STM8S208RBT6 is used for smart door locks, ...
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| [Last Updated : 2024-04-11] |
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MCU 24MHz, 8-Bit MCU LQFP-64 STM8S208RBT6 Suitable for smart door lock and fingerprint lock scheme STM8S207R8T6 STM8S207RBT6 STM8S208R8T6 STM8S208RBT6 is used for smart door locks, ...
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| [Last Updated : 2024-04-11] |
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32-Bit M3 LQFP-64 STM32F103RCT6 Suitable for smart door lock and fingerprint lock scheme 32-Bit FLASH ARM® Cortex®-M3 72MHz 2V ~ 3.6V LQFP-64_10x10x05P ST Microelectronics RoHS
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| [Last Updated : 2024-04-11] |
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MCU 24MHz, 8-Bit MCU LQFP-64 STM8S207R8T6 Suitable for smart door lock and fingerprint lock scheme STM8S207R8T6 STM8S207RBT6 STM8S208R8T6 STM8S208RBT6 is used for smart door locks, ...
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| [Last Updated : 2024-04-11] |
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MCU 24MHz, 8-Bit MCU LQFP-64 STM8S207RBT6 Suitable for smart door lock and fingerprint lock scheme STM8S207R8T6 STM8S207RBT6 STM8S208R8T6 STM8S208RBT6 is used for smart door locks, ...
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| [Last Updated : 2024-04-11] |
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MCU 32-Bit M3 LQFP-64 STM32F103VET6 2V ~ 3.6V 32-Bit ARM® Cortex®-M3 72MHz FLASH 80 LQFP-100_14x14x05P ST Microelectr
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| [Last Updated : 2024-04-11] |
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MCU 32-Bit M3 LQFP-64 STM32F103RCT6 Applied stage lighting control panel 32-Bit FLASH ARM® Cortex®-M3 72MHz 2V ~ 3.6V LQFP-64_10x10x05P ST Microelectronics RoHS
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| [Last Updated : 2024-04-11] |
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MCU 32-Bit M3 LQFP-64 STM32F103RCT6 Applied to the printer control panel32-Bit FLASH ARM® Cortex®-M3 72MHz 2V ~ 3.6V LQFP-64_10x10x05P ST Microelectronics RoHS
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| [Last Updated : 2024-04-11] |
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6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
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| [Last Updated : 2024-04-11] |
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High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen...
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| [Last Updated : 2024-04-11] |
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Durable High Speed Power Switching Transistor , Power Darlington Transistor General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Low Gate Charge • Optimized for ...
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| [Last Updated : 2024-04-11] |
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High Voltage Switching Mosfet Power Transistor With High Thermal Resistance General Description The AOD407 uses advanced trench technology to provide excellent R DS(ON) , low gate ...
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| [Last Updated : 2024-04-11] |
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OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A General Description The AOD403/AOI403 uses advanced trench technology to provide excellent R DS(ON) , ...
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| [Last Updated : 2024-04-11] |
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Highest Performance Mosfet Power Transistor With Extreme High Cell Density Mosfet Power Transistor Feature Description It is a high voltage power MOSFET designed to have better ...
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| [Last Updated : 2024-04-11] |
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