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ssic aluminum nitride wafer

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Results forssic aluminum nitride waferfrom 1318 Products.
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the ...
Shanghai, china
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2 inch monocrystalline sapphire wafer double sides polished Al2O3 99.999% single crystal substrate Product description Sapphire wafer is a common substrate for the preparation of ...
Shanghai, china
Verified
Boron Nitride Gasket (BN Sealing Element) We provide standard products & tailor-made products for hot-pressed boron nitride gasket. Except for pure BN99 blank, we also supply BN ...
Henan, china
Member
Customized White Zirconia Ceramic Ring Smart Wearable Ring Parts , Carbide SSiC ,Ceramic Si3N4 Parts : Quick Detail: Optional Materials alumina, zirconia, silicon carbide, silicon ...
china
Verified
Ø25 Ceramic Valve Ball In Material Of Silicon Carbide With High Precision Description of Ø25 Ceramic Valve Ball: SSiC valve balls are made of highly purified, sub-micron silicon ...
Tianjin, china
Verified
Product details Product name Aluminum Alloy Wafer Color Silver Shape Round Surface Smooth MOQ 1 Ton Alloy 1100 1050 1060 Size Costomization Standard GB/T3880 ASTM B209 Material ...
Henan, china
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5*10.5mm2 A Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10.5mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices ...
Shanghai, china
Verified
Boron Nitride (BN) Nozzle We provide standard products & tailor-made products for hot-pressed boron nitride nozzle. Except for pure BN99 crucible, we also supply BN composites with ...
Henan, china
Member
Ceramic Angular Contact Balls Bearings In Material Of Si3N4/SSiC/ZrO2 Description of Ceramic Angular Contact Balls Bearings: Our company can customize ceramic angular contact balls ...
Tianjin, china
Verified
10*10.5mm2 C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview We sell directly from the factory, and therefore can ...
Shanghai, china
Verified
Boron Nitride Insulators We provide standard products & tailor-made products for hot-pressed boron nitride insulators. Except for pure BN99 insulator, we also supply BN composites ...
Henan, china
Member
Ceramic Deep Groove Balls Bearings in material Of Si3N4/SSiC/ZrO2 Description of Ceramic Deep Groove Bearings: 1. The material of races and balls can be chosen among silicon ...
Tianjin, china
Verified
2inch Green-LED GaN on silicon wafer Overview Gallium nitride (GaN) is creating an innovative shift throughout the power electronics world. For decades, silicon-based MOSFETs ...
Shanghai, china
Verified
Boron Nitride Gasket (BN Sealing Element) We provide standard products & tailor-made products for hot-pressed boron nitride gasket. Except for pure BN99 blank, we also supply BN ...
Henan, china
Verified
SSiC/Si3N4 Ceramic Ball Bearings Description: Ceramic bearings are designed with the same specifications as steel bearings, and their dimensions are usually identical with steel ...
Tianjin, china
Verified
2inch Green-LED GaN on silicon wafer Overview Gallium nitride (GaN) is creating an innovative shift throughout the power electronics world. For decades, silicon-based MOSFETs ...
Shanghai, china
Verified
Boron Nitride Insulators We provide standard products & tailor-made products for hot-pressed boron nitride insulators. Except for pure BN99 insulator, we also supply BN composites ...
Henan, china
Verified
5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms ...
Shanghai, china
Verified
Boron Nitride (BN) Nozzle We provide standard products & tailor-made products for hot-pressed boron nitride nozzle. Except for pure BN99 crucible, we also supply BN composites with ...
Henan, china
Verified
2-inch Free-standing U-GaN/SI-GaN Substrates 50.8 ± 1 mm 350 ± 25 μm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device...
Shanghai, china
Verified
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