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White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0

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White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0

Country/Region	china
City & Province	wuxi jiangsu
Categories	Connectors

Product Details

Solid Power-DS-SPS300B17G6R8-S04020024 V1.0

1700V 300A IGBT Half Bridge Module

Features:

□ 1700V Trench+ Field Stop technology

□ Freewheeling diodes with fast and soft reverse recovery

□ V_CE(sat) with positive temperature coefficient

□ Low switching losses

Typical Applications:

□ Motor/Servo Drives

□ High Power Converters

□ UPS

□ Photovoltaic

Package

Item	Symbol	Conditions		Values			Unit
Isolation test voltage	VISOL	RMS, f = 50 Hz, t =1 min		4.0			kV
Material of module baseplate				Cu
Internal isolation		(class 1, IEC 61140) Basic insulation (class 1, IEC 61140)		Al₂O₃
Creepage distance	dCreep	terminal to heatsink		29.0			mm
	dCreep	terminal to terminal		23.0
Clearance	dClear	terminal to heatsink		23.0			mm
	dClear	terminal to terminal		11.0
Comparative tracking index	CTI			＞400

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Stray inductance module	LsCE				20		nH
Module lead resistance, terminals - chip	RCC’+EE’		T_C=25℃		0.70		mΩ
Storage temperature	Tstg			-40		125	℃
Mounting torque for module mounting	M6			3.0		6.0	Nm
Terminal connection torque	M6			2.5		5.0	Nm
Weight	G				320		g

IGBT Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Collector-emitter Voltage	VCES		T_vj=25℃	1700	V
Maximum gate-emitter voltage	VGES			±20	V
Transient gate-emitter voltage	VGES	t_p≤10μs,D=0.01		±30	V
Continuous DC collector current	I_C		T_C=25℃	500	A
Continuous DC collector current	I_C		T_C=100℃	300	A
Pulsed collector current,tp limited by T_jmax	ICpulse			600	A
Power dissipation	Ptot			1500	W

Characteristic Values

Item	Symbol	Conditions		Values			Unit
Item	Symbol	Conditions		Min.	Typ.	Max.	Unit
Collector-emitter saturation voltage	VCE(sat)	I_C=300A, V_GE=15V	T_vj=25℃		1.70	2.00	V
			T_vj=125℃		1.95
			T_vj=150℃		2.00
Gate threshold voltage	VGE(th)	V_CE=V_GE, I_C=12mA		5.1	5.9	6.6	V
Collector-emitter cut-off current	ICES	V_CE=1700V, V_GE=0V	T_vj=25℃			100	µA
Collector-emitter cut-off current	ICES	V_CE=1700V, V_GE=0V	T_vj=150℃			5	mA
Gate-emitter leakage current	IGES	V_CE=0V,V_GE=±20V, T_vj=25℃		-200		200	nA
Gate Charge	Q_G	V_CE=900V, I_C=300A , V_GE=±15V			1.6		μC
Input Capacitance	Cies	V_CE=25V, V_GE=0V, f =100kHz			25.0		nF
Output Capacitance	Coes				1.4
Reverse Transfer Capacitance	Cres				0.4
Internal gate resistor	RGint	T_vj=25℃			3.5		Ω
Turn-on delay time,inductive load	td(on)	V_CC=900V,I_C=300A R_G=3.3Ω, V_GE=±15V	T_vj=25℃		185		ns
			T_vj=125℃		220		ns
			T_vj=150℃		230		ns
Rise Time,inductive load	t_r		T_vj=25℃		76		ns
			T_vj=125℃		92		ns
			T_vj=150℃		96		ns
Turn-off delay time,inductive load	td(off)	V_CC=900V,I_C=300A R_G=3.3Ω, V_GE=±15V	T_vj=25℃		550		ns
			T_vj=125℃		665		ns
			T_vj=150℃		695		ns
Fall time,inductive load	t_f		T_vj=25℃		390		ns
			T_vj=125℃		610		ns
			T_vj=150℃		675		ns
Turn-on energy loss per pulse	Eon	V_CC=900V,I_C=300A R_G=3.3Ω, V_GE=±15V	T_vj=25℃		44.7		mJ
			T_vj=125℃		73.2		mJ
			T_vj=150℃		84.6		mJ
Turn off Energy loss per pulse	Eoff		T_vj=25℃		68.5		mJ
			T_vj=125℃		94.7		mJ
			T_vj=150℃		102.9		mJ
SC data	ISC	V_GE≤15V, V_CC=900V	tp≤10µs T_vj=150℃			950	A
IGBT thermal resistance,junction-case	RthJC					0.10	K /W
Operating Temperature	TJop			-40		175	℃

Diode Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Repetitive reverse voltage	VRRM		T_vj=25℃	1700	V
Continuous DC forward current	I_F		T_C=25℃	300	A
Continuous DC forward current	I_F		T_C=100℃	170
Diode pulsed current,tp limited by T_Jmax	IFpulse			600

Characteristic Values

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Forward voltage	V_F	I_F=300A , V_GE=0V	T_vj=25℃		2.45	2.80	V
			T_vj=125℃		2.65
			T_vj=150℃		2.65
Reverse recovery time	trr	I_F=300A dI_F/dt=-4000A/μs (T_vj=150°C) V_R=900V, V_GE=-15V	T_vj=25℃		160		ns
			T_vj=125℃		230
			T_vj=150℃		270
Peak reverse recovery current	IRRM		T_vj=25℃		380		A
			T_vj=125℃		400
			T_vj=150℃		415
Reverse recovery charge	QRR		T_vj=25℃		61		µC
			T_vj=125℃		104
			T_vj=150℃		123
Reverse recovery energy loss per pulse	Erec		T_vj=25℃		29.7		mJ
			T_vj=125℃		53.6
			T_vj=150℃		63.4
Diode thermal resistance,junction-case	RthJCD					0.20	K /W
Operating Temperature	TJop			-40		175	℃

Output characteristic(typical) Output characteristic(typical)

I_C = f (V_CE) I_C = f (V_CE)

T_vj= 150°C

IGBT

Transfer characteristic(typical) Switching losses IGBT (typical)

I_C = f (V_GE) E = f (R_G)

V_CE = 20V V_GE = ±15V, I_C = 300A, V_CE = 900V

IGBT RBSOA

Switching losses IGBT (typical) Reverse bias safe operating area(RBSOA)

E = f (I_C) I_C =f (V_CE)

V_GE = ±15V, R_G = 3.3Ω , V_CE = 900V V_GE = ±15V, R_Goff = 3.3Ω, T_vj = 150°C

Typical capacitance as a function of collector-emitter voltage Gate charge (typical)

C = f (V_CE) V_GE = f (Q_G)

f = 100 kHz, V_GE = 0V I_C = 300A, V_CE = 900V

IGBT

IGBT transient thermal impedance as a function of pulse width Forward characteristic of Diode (typical)

Zth(j-c) = f (t) I_F = f (V_F)

Switching losses Diode(typical) Switching losses Diode(typical)

E_rec = f (R_G) E_rec = f (I_F)

I_F = 300A, V_CE = 900V R_G = 3.3Ω, V_CE = 900V

Diode transient thermal impedance as a function of pulse width

Zth(j-c) = f (t)

The "1700V 300A IGBT Half Bridge Module" integrates two Insulated Gate Bipolar Transistors (IGBTs) in a half-bridge configuration. It's designed for high-power applications, offering precise control over voltage (1700V) and current (300A). Effective cooling is crucial, and detailed specifications can be found in the manufacturer's datasheet.

Circuit diagram headline