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Custom IGBT Modules 62mm Low Switching Losses DS-SPS200B17G6R8-S04020023 V1.0

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Custom IGBT Modules 62mm Low Switching Losses DS-SPS200B17G6R8-S04020023 V1.0

Country/Region	china
City & Province	wuxi jiangsu
Categories	Switches

Product Details

Solid Power-DS-SPS200B17G6R8-S04020023 V1.0

1700V 200A IGBT Half Bridge Module

Features:

□ 1700V Trench+ Field Stop technology

□ Freewheeling diodes with fast and soft reverse recovery

□ V_CE(sat) with positive temperature coefficient

□ Low switching losses

Typical Applications:

□ Motor/Servo Drives

□ High Power Converters

□ UPS

□ Photovoltaic

Package

Item	Symbol	Conditions		Values			Unit
Isolation test voltage	VISOL	RMS, f = 50 Hz, t =1 min		4.0			kV
Material of module baseplate				Cu
Internal isolation		(class 1, IEC 61140) Basic insulation (class 1, IEC 61140)		Al₂O₃
Creepage distance	dCreep	terminal to heatsink		29.0			mm
	dCreep	terminal to terminal		23.0
Clearance	dClear	terminal to heatsink		23.0			mm
	dClear	terminal to terminal		11.0
Comparative tracking index	CTI			＞400

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Stray inductance module	LsCE				20		nH
Module lead resistance, terminals - chip	RCC’+EE’		T_C=25℃		0.70		mΩ
Storage temperature	Tstg			-40		125	℃
Mounting torque for module mounting	M6			3.0		6.0	Nm
Terminal connection torque	M6			2.5		5.0	Nm
Weight	G				320		g

IGBT

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Collector-emitter Voltage	VCES		T_vj=25℃	1700	V
Maximum gate-emitter voltage	VGES			±20	V
Transient gate-emitter voltage	VGES	t_p≤10μs,D=0.01		±30	V
Continuous DC collector current	I_C		T_C=25℃	360	A
Continuous DC collector current	I_C		T_C=100℃	200	A
Pulsed collector current,tp limited by T_jmax	ICpulse			400	A
Power dissipation	Ptot			1070	W

Characteristic Values

Item	Symbol	Conditions		Values			Unit
Item	Symbol	Conditions		Min.	Typ.	Max.	Unit
Collector-emitter saturation voltage	VCE(sat)	I_C=200A, V_GE=15V	T_vj=25℃		1.65	1.95	V
			T_vj=125℃		1.90
			T_vj=150℃		1.92
Gate threshold voltage	VGE(th)	V_CE=V_GE, I_C=8mA		5.0	5.8	6.5	V
Collector-emitter cut-off current	ICES	V_CE=1700V, V_GE=0V	T_vj=25℃			100	µA
Collector-emitter cut-off current	ICES	V_CE=1700V, V_GE=0V	T_vj=150℃			5	mA
Gate-emitter leakage current	IGES	V_CE=0V,V_GE=±20V, T_vj=25℃		-200		200	nA
Gate Charge	Q_G	V_CE=900V, I_C=200A , V_GE=±15V			1.2		μC
Input Capacitance	Cies	V_CE=25V, V_GE=0V, f =100kHz			18.0		nF
Output Capacitance	Coes				1.06
Reverse Transfer Capacitance	Cres				0.28
Internal gate resistor	RGint	T_vj=25℃			4.5		Ω
Turn-on delay time,inductive load	td(on)	V_CC=900V,I_C=200A R_G=3.3Ω, V_GE=±15V	T_vj=25℃		188		ns
			T_vj=125℃		228		ns
			T_vj=150℃		232		ns
Rise Time,inductive load	t_r		T_vj=25℃		56		ns
			T_vj=125℃		68		ns
			T_vj=150℃		72		ns
Turn-off delay time,inductive load	td(off)	V_CC=900V,I_C=200A R_G=3.3Ω, V_GE=±15V	T_vj=25℃		200		ns
			T_vj=125℃		600		ns
			T_vj=150℃		620		ns
Fall time,inductive load	t_f		T_vj=25℃		470		ns
			T_vj=125℃		710		ns
			T_vj=150℃		745		ns
Turn-on energy loss per pulse	Eon	V_CC=900V,I_C=200A R_G=3.3Ω, V_GE=±15V	T_vj=25℃		33.2		mJ
			T_vj=125℃		52.2		mJ
			T_vj=150℃		59.9		mJ
Turn off Energy loss per pulse	Eoff		T_vj=25℃		49.1		mJ
			T_vj=125℃		67.3		mJ
			T_vj=150℃		70.5		mJ
SC data	ISC	V_GE≤15V, V_CC=900V	tp≤10µs T_vj=150℃			720	A
IGBT thermal resistance,junction-case	RthJC					0.14	K /W
Operating Temperature	TJop			-40		175	℃

Diode

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Repetitive reverse voltage	VRRM		T_vj=25℃	1700	V
Continuous DC forward current	I_F		T_C=25℃	280	A
Continuous DC forward current	I_F		T_C=100℃	200
Diode pulsed current,tp limited by T_Jmax	IFpulse			400

Characteristic Values

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Forward voltage	V_F	I_F=200A , V_GE=0V	T_vj=25℃		2.00	2.40	V
			T_vj=125℃		2.15
			T_vj=150℃		2.20
Reverse recovery time	trr	I_F=200A dI_F/dt=-3500A/μs (T_vj=150°C) V_R=900V, V_GE=-15V	T_vj=25℃		140		ns
			T_vj=125℃		220
			T_vj=150℃		275
Peak reverse recovery current	IRRM		T_vj=25℃		307		A
			T_vj=125℃		317
			T_vj=150℃		319
Reverse recovery charge	QRR		T_vj=25℃		45		µC
			T_vj=125℃		77
			T_vj=150℃		89
Reverse recovery energy loss per pulse	Erec		T_vj=25℃		20.4		mJ
			T_vj=125℃		39.6
			T_vj=150℃		45.2
Diode thermal resistance,junction-case	RthJCD					0.20	K /W
Operating Temperature	TJop			-40		175	℃

Output characteristic(typical) Output characteristic(typical)

I_C = f (V_CE) I_C = f (V_CE)

T_vj= 150°C

IGBT

Transfer characteristic(typical) Switching losses IGBT (typical)

I_C = f (V_GE) E = f (R_G)

V_CE = 20V V_GE = ±15V, I_C = 200A, V_CE = 900V

IGBT RBSOA

Switching losses IGBT (typical) Reverse bias safe operating area(RBSOA)

E = f (I_C) I_C =f (V_CE)

V_GE = ±15V, R_G = 3.3Ω , V_CE = 900V V_GE = ±15V, R_Goff = 3.3Ω, T_vj = 150°C

Typical capacitance as a function of collector-emitter voltage Gate charge (typical)

C = f (V_CE) V_GE = f (Q_G)

f = 100 kHz, V_GE = 0V I_C = 200A, V_CE = 900V

IGBT

IGBT transient thermal impedance as a function of pulse width Forward characteristic of Diode (typical)

Zth(j-c) = f (t) I_F = f (V_F)

Switching losses Diode(typical) Switching losses Diode(typical)

E_rec = f (R_G) E_rec = f (I_F)

I_F = 200A, V_CE = 900V R_G = 3.3Ω, V_CE = 900V

Diode transient thermal impedance as a function of pulse width

Zth(j-c) = f (t)

The "1700V 200A IGBT Half Bridge Module" integrates two IGBTs in a half-bridge configuration. It's designed for high-power applications, offering precise control over voltage (1700V) and current (200A). Effective cooling is crucial for reliable operation, and detailed specifications can be found in the manufacturer's datasheet.

Circuit diagram headline