Results forsingle crystal sic substratefrom 4782 Products.
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JDCD03-002-002 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview SiC is used for the fabrication of very high...
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2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/4inch 6inch silicon carbide SIC 4H-N seed crystal Wafer For crystal growth About Silicon Carbide (SiC)Crystal Silicon carbide ...
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3inch diameter single crystal substrate GGG Wafer Gadolinium Gallium Garnet (GGG, Gd3Ga5O12) is a synthetic crystalline material of the garnet group, with good mechanical, thermal, ...
china
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5inch R-plane A-axis M-plane sapphire wafer for LED epi-ready,dia125mm sapphire substrates ,5inch R-axis A-plane Al2O3 sapphire substrates , diameter 125mm 5" thickness 1.0mm ...
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6inch 4H-SiC substrate N-Type P-MOS Grade 350.0±25.0μm MPD≤0.2/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC is used for the fabrication of very ...
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2-4inch Gallium antimonide GaSb Substrate Single Crystal Monocrystal for Semiconductor Gallium antimonide (GaSb) is a very important III-V direct bandgap semiconductor material. It ...
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Crystro GGG Gd3Ga5O12 Crystalline Material Single Crystal Substrate Gadolinium Gallium Garnet (GGG, Gd3Ga5O12) is a synthetic crystalline material of the garnet group, with good ...
china
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
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10x10x0.5mm High Output Ce GAGG Single Crystal Substrates GAGG(Ce) (Ce:GAGG, Gd3Al2Ga3O12) is new scintillator for single photon emission computed tomography(SPECT), gamma-ray and ...
china
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Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm FWHM<350arcsec 10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6...
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3inch diameter Laalo3 wafer Lanthanum aluminate (LaAlO3) substrate single crystal is the most important industrialized, large-size high-temperature superconducting thin film single ...
china
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3*3mm²*0.3mm Electronic Grade Single Crystal Diamond,N Content<100ppb, XRD<0.015º For Heat Sink Overview After nearly 4 decades of stop-start research into CVD diamond growth, ...
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Good Thermal Stability Optical Substrate Single Crystal LaO LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial ...
china
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Single side polished Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm 10x15mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness ...
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High Temperature Superconducting Single Crystal Substrate Laalo3 LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for ...
china
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10*10.5mm2 C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview We sell directly from the factory, and therefore can ...
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10*10.5mm2 C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high...
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5*10mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
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5*10mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate ...
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