IXTQ130N10T MOSFET High Power Low On Resistance and Low Gate Threshold Voltage for Optimal Performance

IXTQ130N10T MOSFET High Power

Low On Resistance and Low Gate Threshold Voltage for Optimal Performance

Product Features:

- N-Channel MOSFET
- Voltage: 100V
- RDS(on): 0.01 Ohm
- ID: 130A
- Package: TO-247

Product Description:

The IXYS IXTQ130N10T is an N-channel MOSFET with a max drain source voltage of 100V and a max drain current of 130A. This device offers a low RDS(on) of 0.01 Ohm and is housed in a TO-247 package. It is designed for use in various applications such as motor control, power management, and other power supply applications.

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