IRFP7530PBF MOSFET Power Electronics High Power Handling Fast Switching

IRFP7530PBF MOSFET Power Electronics High Power Handling Fast Switching

Description: The IRFP7530PBF is a N-Channel Enhancement Mode MOSFET from International Rectifier. This MOSFET has a maximum drain source voltage of 500V and a typical gate threshold voltage of 4V. It has a maximum drain current of 61A and a maximum drain source resistance of 0.0084 Ohms. It offers a maximum power dissipation of 225W and a maximum junction temperature of 175°C.

Parameters:
- Drain-Source Voltage: 500V
- Gate Threshold Voltage: 4V
- Drain Current: 61A
- Drain Source Resistance: 0.0084 Ohms
- Power Dissipation: 225W
- Junction Temperature: 175°C

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