SIHG22N60E-GE3 MOSFET Power Electronics: High-Performance Ultra-Low On-Resistance Low Gate Charge and Low Capacitance

Product Listing:

SIHG22N60E-GE3 MOSFET

Features:

- 600V N-Channel MOSFET

- Highest efficiency and superior switching performance

- Low input capacitance and gate charge

- Low gate-source threshold voltage

- 100% avalanche tested

- RoHS compliant

Electrical Parameters:

- Drain-Source Voltage (Vds): 600V

- Drain Current (Id): 22A

- Drain-Source On-State Resistance (Rds): 0.026ohm

- Gate-Source Voltage (Vgs): ±20V

- Gate Threshold Voltage (Vth): 1.9V

- Continuous Drain Current (Id): 22A

- Power Dissipation (Pd): 229w

- Transistor Case Style: TO-220F

- No. of Pins: 3Pins

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