TN5335N8-G MOSFET Power Electronics High Performance N-channel Superior Efficiency

TN5335N8-G MOSFET Power Electronics High Performance N-channel Superior Efficiency

Product Listing:

TN5335N8-G MOSFET Power Electronics

The TN5335N8-G is a MOSFET power electronics module that offers outstanding performance, reliability, and efficiency for a wide range of applications. It features a 60V drain-source voltage, a maximum continuous drain current of 5A, and a maximum power dissipation of 15W. The TN5335N8-G also has a low on-state resistance of 0.41Ω, an extremely low gate charge of 1.2nC, and an excellent thermal performance with a maximum junction temperature of 150°C. Its small package size of 2.3mm x 2.3mm makes it ideal for high density boards and applications.

Features:

• 60V drain-source voltage
• Maximum continuous drain current of 5A
• Maximum power dissipation of 15W
• Low on-state resistance of 0.41Ω
• Extremely low gate charge of 1.2nC
• Maximum junction temperature of 150°C
• Package size of 2.3mm x 2.3mm

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