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[China]
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High Quality SOT-223 Package NVF6P02T3G MOSFET Power Electronics P-Channel -10 A -20 V
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 50mOhm @ 6A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 16 V | |
FET Feature | - | |
Power Dissipation (Max) | 8.3W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-223 (TO-261) | |
Package / Case |
Product Description:
The ON Semiconductor NVF6P02T3G is a N-channel MOSFET Power Electronics device. This device is designed to operate from a 6V gate threshold, and features a low on-resistance of 2.3mΩ at a 10V drain-source voltage. The package is SOT-223.
Product Features:
• N-channel MOSFET
• 6V gate threshold
• Low on-resistance of 2.3mΩ at 10V drain-source voltage
• Package: SOT-223
• Manufacturer: ON Semiconductor
