Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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N-Channel PowerTrench
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 24mOhm @ 6.2A, 4.5V | |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 1125 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 1.6W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SuperSOT™-6 | |
Package / Case |
General Description
This N-Channel 2.5V specified MOSFET is produced using ON
Semiconductor's advanced PowerTrench process that has been
especially tailored to minimize on-state resistance and yet
maintain low gate charge for superior switching performance.
These devices have been designed to
offerexceptionalpowerdissipation in a very small footprint compared
with bigger SO-8 and TSSOP-8 packages.
Applications
• DC/DC converter
• Load switch
• Battery Protection
Features
• 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V
RDS(on) = 0.032 Ω @ VGS = 2.5 V
• Fast switching speed.
• Low gate charge (10.5nC typical).
• High performance trench technology for extremely low RDS(ON).
• SuperSOTTM-6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).
