Shenzhen Sai Collie Technology Co., Ltd. |
|
NDT456P MOSFET Power Electronics
TO-261-4 Package P-Channel Enhancement Mode Field Effect Transistor
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 30mOhm @ 7.5A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1440 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 3W (Ta) | |
Operating Temperature | -65°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-223-4 | |
Package / Case |
General Description
Power SOT P-Channel enhancement mode power field effect transistors
are produced using ON Semiconductor's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance
and provide superior switching performance. These devices are
particularly suited for low voltage applications
such as notebook computer power management, batterypowered
circuits, and DC motor control.
Features
-7.5 A, -30 V. RDS(ON)
= 0.030 W @ VGS = -10 V
RDS(ON)
= 0.045 W @ VGS = -4.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely
used surface mount package.
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