|
[China]
Trade Verify
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
|
Verified Suppliers
|
|
|
FDMS86181 MOSFET Power Electronics Single N-Channel Shielded Gate POWERTRENCH 100 V 124 A 4.2 m
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 44A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4125 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-PQFN (5x6) | |
Package / Case |
General Description
This N−Channel MV MOSFET is produced using onsemi’s
advanced POWERTRENCH® process that incorporates Shielded
Gate technology. This process has been optimized to minimise
on−state resistance and yet maintain superior switching performance
with best in class soft body diode.
Features
• Shielded Gate MOSFET Technology
• Max rDS(on) = 4.2 m at VGS = 10 V, ID = 44 A
• Max rDS(on) = 12 m at VGS = 6 V, ID = 22 A
• ADD
• 50% lower Qrr than other MOSFET suppliers
• Lowers switching noise/EMI
• MSL1 robust package design
• 100% UIL tested
• RoHS Compliant
Applications
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
• Solar
res
