Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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FDN340P MOSFET Power Electronics Single P-Channel POWERTRENCH Logic Level Package SOT-23
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 70mOhm @ 2A, 4.5V | |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 779 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 500mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-23-3 | |
Package / Case |
General Description
This P−Channel Logic Level MOSFET is produced using onsemi advanced
POWERTRENCH process that has been especially tailored to minimize
the on−state resistance and yet maintain low gate charge for
superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery charging
circuits, and dc−dc conversion.
Features
• −2 A, 20 V
♦ RDS(ON) = 70 m @ VGS = −4.5 V
♦ RDS(ON) = 110 m @ VGS = −2.5 V
• Low Gate Charge (7.2 nC Typical)
• High Performance Trench Technology for Extremely Low RDS(ON)
• High Power Version of Industry Standard SOT−23 Package. Identical
Pin−Out to SOT−23 with 30% Higher Power Handling Capability
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
