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[China]
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Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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Verified Suppliers
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Product Listing:
IRF630NPBF MOSFET Power Electronics
Description:
The IRF630NPBF MOSFET Power Electronics from Infineon Technologies is a N-channel enhancement-mode power MOSFET designed for use in low-voltage power applications. This device offers excellent switching performance with low gate and drain-source charge, and low on-state resistance. It has a maximum drain-source breakdown voltage of 100V, a maximum drain current of 5A and a maximum power dissipation of 6W. This device is also RoHS compliant and is suitable for use in numerous commercial applications.
Features:
- N-channel enhancement-mode power MOSFET
- Maximum drain-source breakdown voltage: 100V
- Maximum drain current: 5A
- Maximum power dissipation: 6W
- Low gate and drain-source charge
- Low on-state resistance
- RoHS compliant
- Suitable for use in numerous commercial applications
Package: TO-220AB
Manufacturer: Infineon Technologies
Order Code: IRF630NPBF
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 300mOhm @ 5.4A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 575 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 82W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-220AB | |
Package / Case | ||
Base Product Number |
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