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[China]
Trade Verify
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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Verified Suppliers
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IRF6665TRPBF MOSFET Power Electronics
High-Performance Low-RDS(on) for Improved Efficiency
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 62mOhm @ 5A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | DIRECTFET™ SH | |
Package / Case |
Product Description:
The IRF6665TRPBF is a power MOSFET from IRF Technologies. This N-Channel MOSFET is designed to handle up to 55 volts and has a low on-resistance of 3.2 milliohms. The maximum drain current is 55 amps, while the maximum power dissipation is up to 740 watts. The device is packaged in a TO-220AB package.
Product Parameters:
- Type: N-Channel MOSFET
- Voltage: 55V
- On-resistance: 3.2 milliohms
- Maximum Drain Current: 55 Amps
- Maximum Power Dissipation: 740 Watts
- Package: TO-220AB
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