ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W RF Transistors

Features
BVcEo > 100V
BVcEx > 170V Forward Blocking Voltage
BVEco > 6V Reverse Blocking Voltage
Ic = 3A high Continuous Collector Current
Low Saturation Voltage, VCE(SAT) < 80mV @1A
RCE(SAT)= 67mQ for a Low Equivalent On-Resistance
1.25W Power Dissipation
hFE Specified up to 3A for High Current Gain Hold Up
Complementary PNP Type: ZXTP25100BFH
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free.“Green" Device (Note 3)
Qulified to AEC-Q101 Standards for High Rellbllity

Mechanical Data
Case: SOT23
Case Material: molded plastic, "Green" Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J -STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 2080@3)
Weight 0.008 grams (Approximate)

Applications
●Lamp Relay and Solenoid Drivers
●General Switching in Automotive and Industrial Applications
●Motor Drive and Control

1. Type: NPN (Negative-Positive-Negative) Bipolar Junction Transistor
2. Voltage Rating: 100 V (maximum collector-emitter voltage)
3. Current Rating: 3 A (maximum collector current)
4. Frequency: 160 MHz (maximum frequency at which it can operate effectively)
5. Power Dissipation: 1.25 W (maximum power that can be dissipated by the transistor)
6. Package Type: Surface Mount (SMT) package, which is a type of package that allows

• for mounting on the surface of a printed circuit board (PCB) without requiring through-hole soldering.