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4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer About ...
Shanghai, china
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Corrosion resistant silicon carbide ceramic lined pipe is composed by lined with cast basalt pipe, outside steel pipe and cement mortar filling between the two layers. This greatly improves the products adaptive capacity ...
0.015~0.028ohm.Cm SiC Seed Crystal 4" P Grade N-Type Orientation 4.0°±0.2° SiC Seed Crystal 4" PGrade SiC CRYSTAL is an ultra-high purity silicon carbide grain or powder, specially ...
Shanghai, china
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4H High Purity Semi-Insulating Silicon Carbide Substrateshigh purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor 4inch SiC substrates ,Silicon Carbide ...
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2INCH 6H-semi Silicon Carbide sic Wafer 330um dummy research grade Customzied size/10x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch ...
Shanghai, china
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JDZJ01-001-007 Silicon Carbide Seed Crystal Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects ...
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4H High Purity Semi-Insulating Silicon Carbide Substrateshigh purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor 4inch SiC substrates ,Silicon Carbide ...
Shanghai, china
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2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic ...
Shanghai, china
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6inch 4H-SiC substrate N-Type D Grade 350.0±25.0μm MPD≤5/cm2 Resistivity 0.014Ω•cm—0.028Ω•cm for power and microwave devices Overview Silicon Carbide (SiC) is a covalent network ...
Shanghai, china
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3inch sic wafer,4H High Purity Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, 4inch SiC substrates ,Silicon ...
Shanghai, china
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4h-n 4inch 6inch dia100mm sic seed wafer 1mm thickness for ingot growth Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm ...
Shanghai, china
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6inch production prime SIC crystal Silicon Carbide seed Wafer 0.6mm Thickness for sic growth high purity undoped or transparent colorless sic optical lens wafer for Quantum light ...
Shanghai, china
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Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single sic wafer 4Inch prime research dummy Grade 4H-N...
Shanghai, china
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6inch sic substrates, 4h-n,4H-SEMI,sic ingot sic crystal ingots sic crystal block sic semiconductor substrates,High purity silicon carbide SiC Wafer SiC crystal are cutted into ...
Shanghai, china
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Customzied size/60x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ ...
Shanghai, china
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2inch 6H-Semi sic wafer ,customized sic substrates , 2inch 6H-N sic wafers , sic crystal ingots ,Silicon Carbide Wafer About Silicon Carbide SiC crystal Advantagement • Low lattice ...
Shanghai, china
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Customzied size/10x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ ...
Shanghai, china
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4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device, Application areas 1 high frequency and high power ...
Shanghai, china
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Semi-Insulating 3-Inch Silicon Carbide wafer 4H N-Type CVD Orientation : 4.0°±0.5° Semi-Insulating 3-Inch Silicon Carbide wafer's Abstract The unique electronic and thermal ...
Shanghai, china
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2inch 4/6inch dia200mm sic seed wafer 1mm thickness for ingot growth High Purity 4 6 8-inch conductive semi-insulation SiC single crystal wafer Customized size/2inch/3inch/4inch...
Shanghai, china
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