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High Damage Threshold RTP Pockels Cell Switching No Piezoelectric Ringing Non - Hygroscopic

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Jinan Crystrong Photoelectric Technology Co.,Ltd

High Damage Threshold RTP Pockels Cell Switching No Piezoelectric Ringing Non - Hygroscopic

Country/Region china
City & Province jinan shandong
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Product Details

High Damage Threshold RTP Pockels Cell No Piezoelectric Ringing

 

Products Description:

 

RTP Q-SWITCH

RTP crystal appealing because it is not sensitive to moisture. easy to handle and coat, and also it does not exhibit piezo-electric ringing at elevated repetition rate. Moreover, RTP exhibits high electro-optic coefficients that allow the monitoring of Pockels cell with low power voltage requirement,

As RTP is transparent from 0.4 to 3.5um, it can be used in multiple types of laser such as Er:YAG laser at 2.94um with fairly good efficiency. Bulk absorption measurements at 1.064um range from

50 to 150ppm using Photothermal Common Path Interferometer.

RTP has a fairly high surface damage threshold at 15J/cm? (1064nm, 10ns, 10Hz).

 

ADVANTAGES:

 

  • High Damage Threshold.
  • No Piezoelectric Ringing.
  • Low Insertion Loss.
  • Thermal Compensating Design.
  • Non-hygroscopic.
  • High Extinction and Contrast Ratio.
  • Spectral range 500-3000 nm.
  • Not induce piezo-electric effect.

 

APPLICATION:

 

  • SHG Na: lasers at 1064nm.
  • Electro-Optical Q-switch and modulation for optical waveguides.
  • Optical Parametric Amplifiers (OPA) and Oscillators (OPO) application.

 

 

SPECIFICATIONS:

 

Apertureup to 100x100mm2
LengthMinimum up to 1 mm,Maximum up to 40mm
Dimension tolerance±0.1mm
Deuteration Level>98%
Parallelism20 arc seconds
Perpendicularity5 arc minutes
S/D10/5
Flatnessλ/8@633nm
Angle tolerance(degree)0.25°,0.25°
Chamfer0.2mmx45°
Chip0.1mm
Optical Damage Threshold>4GW/cm2@1064nm,20
λ/4 Voltage<3.6KV@1064nm,20
λ/2 Voltage<6.4KV@1064nm,20
Wavelength range300-1100nm
Extinction Ratio>1200:1
Capacitance6~10pF@1kHz
Quality GuaranteeAccording to customer requirements one year under proper use.

 

 

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