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1N5819 40V 1A schottky barrier diode with DO-41 case for generator
Description:
A diode is a one-way valve for electricity. Diodes allow flow of electricity in one direction. Most diodes have a painted line on one end showing the direction or flow. The negative side is normally white.
A Schottky diode is also known as a hot carrier diode; it is a semiconductor diode with a very fast switching action, but a low forward voltage drop.When a current flows through the diode there is a small voltage drop across the diode terminals. In a normal diode, the voltage drop is between 0.6 to 1.7 volts, while in a Schottky diode the voltage drop normally ranges between 0.15 and 0.45volts. This lower voltage drop provides higher switching speed and better system efficiency. In Schottky diode, a semiconductor–metal junction is formed between a semiconductor and a metal, thus creating a Schottky barrier. The N-type semiconductor acts as a cathode and the metal side acts as the anode of the diode.
Features:
• Extremely low VF
• Epitaxial construction
• Low power loss, high efficiency
• Low stored charge, majority carrier construction
• Plastic material has UL flammability classification 94V-0
Application:
Schottky diodes are used for the voltage clamping applications and prevention of transistor saturation due to the high current density in the Schottky diode. It’s also be a low forward voltage drop in Schottky diode, it is wasted in less heat, making them an efficient choice for applications that are sensitive and very efficiency. Because of the Schottky diode used in stand alone photovoltaic systems in order to prevent batteries from discharging purpose for the solar panels at night as well as in grid connected systems, containing multiple strings are connected in parallel connection. Schottky diodes are also used as rectifiers in power supplies.
Maximum Ratings & Thermal Characteristics:
Rating at 25℃ ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.
For Capacitive load derate current by 20%.
| Parameter | Symbol | 1N5819 | Unit |
| Max.repetitive peak reverse voltage | VRRM | 40 | V |
| Max. RMS bridge input voltage | VRMS | 28 | V |
| Max. DC blocking voltage | VDC | 40 | V |
| Max. average forward rectified output current at TA=75℃ | IF(AV) | 1.0 | A |
| Peak forward surge current single sine-wave superimposed on rated load | IFSM | 25 | A |
| Typical thermal resistance per element | ReJA | 50 | ℃/W |
| Typical junction capacitance per element | Cj | 110 | pF |
| Operating junction and storage temperature range | Tj TSTG | -55 to +125 | ℃ |
Electrical Characteristics:
Rating at 25℃ ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.
For Capacitive load derate by 20 %.
| Parameter | Symbol | 1N5819 | Unit |
| Max. instantaneous forward voltage drop per leg at 1.0A | VF | 0.6 | V |
Max. DC reverse current at rated TA=25℃ DC blocking voltage per element TA=25℃ | IR | 1.0 10.0 | mA |
Dimension:
