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Photonic Crystal Atomic Layer Deposition Equipment In Optics Industry

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Photonic Crystal Atomic Layer Deposition Equipment In Optics Industry

Country/Region china
City & Province chengdu sichuan
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Product Details

Atomic Layer Deposition in Optics Industry
 
 
Applications

  Applications  Specific Purpose
 

  Optics
 

  Optical components

  Photonic crystal
  Electroluminescent display
  Surface-enhanced Raman spectroscopy
  Transparent conductive oxide

  Luminous layer, passivation layer, filter protection layer, anti-reflective coating, anti-UV
  coating

 
Working Principle
Atomic layer deposition (ALD), originally called atomic layer epitaxy, also called atomic layer chemical vapor
deposition (ALCVD), is a special form of chemical vapor deposition (CVD). This technology can deposit substances
on the surface of substrate in the form of single atomic film layer by layer, which is similar to common chemical
deposition, but in the process of atomic layer deposition, the chemical reaction of a new layer of atomic film is directly
associated with the previous layer, so that only one layer of atoms is deposited in each reaction by this method.
 
Features

  Model   ALD-O-X—X
  Coating film system   AL2O3, TiO2, ZnO, etc
  Coating temperature range   Normal temperature to 500℃ (Customizable)
  Coating vacuum chamber size

   Inner diameter: 1200mm, Height: 500mm (Customizable)

  Vacuum chamber structure   According to customer’s requirements
  Background vacuum   <5×10-7mbar
  Coating thickness   ≥0.15nm
  Thickness control precision   ±0.1nm
  Coating size   200×200mm² / 400×400mm² / 1200×1200 mm², etc
  Film thickness uniformity   ≤±0.5%
  Precursor and carrier gas

   Trimethylaluminum, titanium tetrachloride, diethyl zinc, pure water,
    nitrogen, etc.

  Note: Customized production available.

                                                                                                                
Coating Samples

Process Steps
→ Place the substrate for coating into the vacuum chamber;
→ Vacuumize the vacuum chamber at high and low temperature, and rotate the substrate synchronously;
→ Start coating: the substrate is contacted with precursor in sequence and without simultaneous reaction;
→ Purge it with high-purity nitrogen gas after each reaction;
→ Stop rotating the substrate after the film thickness is up to standard and the operation of purging and cooling is

     completed, then take out the substrate after the vacuum breaking conditions are met.
 
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