Active Member
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[China]
Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
Contact name:David Lee
Shenzhen Hua Xuan Yang Electronics Co.,Ltd |
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MOSFET Transistor AP2N1K2EN1 Original Electronic Component / IC Chips
Description
AP2N1K2E series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SOT-723 Package with very small footprint is suitable for all commercial-industrial surface mount application.
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on min. copper pad of FR4 board
This product is sensitive to electrostatic discharge, please handle with care.
This product is not authorized to be used as a critical component of a life support system or other similar systems.
APEC shall not be liable for any liability arising from the application or use of any product or circuit described in this agreement, nor shall it assign any license under its patent rights or assign the rights of others.
APEC reserves the right to make changes to any product in this Agreement without notice to improve reliability, function or design.
Absolute Maximum Ratings@Tj=25°C(unless otherwise specified)
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | +8 | V |
| ID@TA=25℃ | Drain Current3, VGS @ 2.5V | 200 | mA |
| IDM | Pulsed Drain Current1 | 400 | mA |
| IS@TA=25℃ | Source Current (Body Diode) | 125 | mA |
| ISM | Pulsed Source Current1(Body Diode) | 800 | mA |
| PD@TA=25℃ | Total Power Dissipation | 0.15 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
Thermal Data
| Symbol | Parameter | Value | Unit |
| Rthj-a | Maximum Thermal Resistance, Junction-ambient3 | 833 | ℃/W |
AP2N1K2EN
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 20 | - | - | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=2.5V, ID=200mA | - | - | 1.2 | Ω |
| VGS=1.8V, ID=200mA | - | - | 1.4 | Ω | ||
| VGS=1.5V, ID=40mA | - | - | 2.4 | Ω | ||
| VGS=1.2V, ID=20mA | - | - | 4.8 | Ω | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=1mA | 0.3 | - | 1 | V |
| gfs | Forward Transconductance | VDS=10V, ID=200mA | - | 1.8 | - | S |
| IDSS | Drain-Source Leakage Current | VDS=16V, VGS=0V | - | - | 10 | uA |
| IGSS | Gate-Source Leakage | VGS=+8V, VDS=0V | - | - | +30 | uA |
| Qg | Total Gate Charge | ID=200mA VDS=10V VGS=2.5V | - | 0.7 | - | nC |
| Qgs | Gate-Source Charge | - | 0.2 | - | nC | |
| Qgd | Gate-Drain ("Miller") Charge | - | 0.2 | - | nC | |
| td(on) | Turn-on Delay Time | VDS=10V | - | 2 | - | ns |
| tr | Rise Time | ID=150mA | - | 10 | - | ns |
| td(off) | Turn-off Delay Time | RG=10Ω | - | 30 | - | ns |
| tf | Fall Time | .VGS=5V | - | 16 | - | ns |
| Ciss | Input Capacitance | VGS=0V VDS=10V f=1.0MHz | - | 44 | - | pF |
| Coss | Output Capacitance | - | 14 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 10 | - | pF |
Source-Drain Diode
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| VSD | Forward On Voltage2 | IS=0.13A, VGS=0V | - | - | 1.2 | V |
