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[China]
Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
Contact name:David Lee
Shenzhen Hua Xuan Yang Electronics Co.,Ltd |
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Custom Made Mosfet Power Transistor Low ON Resistance AP15N10D
Mosfet Power Transistor Applications
Power MOSEFET technology is applicable to many types of circuit. Applications include:
Mosfet Power Transistor Description:
The AP15N10D uses advanced trench technology
and design to provide excellent RDS(ON) with low gat
e charge. It can be used in a wide variety of applications.
It is ESD protested.
Mosfet Power Transistor Features
VDS =100V,ID =15A
RDS(ON) <112mΩ @ VGS=10V
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| AP15N10D | TO-252 | AP15N10D XXX YYYY | 2500 |
Absolute Maximum Ratings (T C=25 ℃unless otherwise noted)
| Symbol | Parameter | Rating | Units |
| V DS | Drain-Source Voltage | 100 | V |
| V GS | Gate-Sou rce Voltage | ±20 | V |
| ID @TC=25 ℃ | Continuous Drain Current, V GS @ 10V 1 | 15 | A |
| ID @TC=100 ℃ | Continuous Drain Current, V GS @ 10V 1 | 7.7 | A |
| ID @TA=25 ℃ | Continuous Drain Current, V GS @ 10V 1 | 3 | A |
| ID @TA=70 ℃ | Continuous Drain Current, V GS @ 10V 1 | 2.4 | A |
| IDM | Pulsed Drain Current 2 | 24 | A |
| EAS | Single Pulse Avalanche Energy 3 | 6.1 | mJ |
| IAS | Avalanche Current | 11 | A |
| P D@TC=25 ℃ | Total Power Dissipation 3 | 34.7 | W |
| P D@TA=25 ℃ | Total Power Dissipation 3 | 2 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| RθJA | Thermal Resistance Junction-ambient 1 | 62 | ℃/W |
| RθJC | Thermal Resistance Junction-Case 1 | 3.6 | ℃/W |
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BV DSS | Drain-Source Breakdown Voltage | V GS=0V , I D=250uA | 100 | --- | --- | V |
| △BV DSS/ △TJ | BVDSS Temperature Coefficient | Reference to 25 ℃ , ID=1mA | --- | 0.098 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance 2 | V GS=10V , ID=10A | --- | 93 | 112 | mΩ |
| V GS=4.5V , ID=8A | --- | 97 | 120 | mΩ | ||
| V GS(th) | Gate Threshold Voltage | 1.0 | --- | 2.5 | V | |
| △VGS(th) | V GS(th) Temperature Coefficient | --- | -4.57 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | V DS=80V , V GS=0V , TJ =25 ℃ | --- | --- | 1 | uA |
| V DS=80V , V GS=0V , TJ =55 ℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | V GS = ±20V , V DS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | V DS=5V , ID=10A | --- | 13 | --- | S |
| Rg | Gate Resistance | V DS=0V , V GS=0V , f=1MHz | --- | 2 | --- | Ω |
| Qg | Total Gate Charge (10V) | --- | 26.2 | --- | ||
| Qgs | Gate-Source Charge | --- | 4.6 | --- | ||
| Qgd | Gate-Drain Charge | --- | 5.1 | --- | ||
| Td(on) | Turn-On Delay Time |
V DD=50V , V GS=10V , RG=3.3 ID=10A | --- | 4.2 | --- |
ns |
| Tr | ||||||
| Td(off) | Turn-Off Delay Time | --- | 35.6 | --- | ||
| Tf | Fall Time | --- | 9.6 | --- | ||
| Ciss | Input Capacitance | --- | 1535 | --- | ||
| Coss | Output Capacitance | --- | 60 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 37 | --- | ||
| IS | Continuous Source Current 1,5 | V G=VD=0V , Force Current | --- | --- | 12 | A |
| ISM | Pulsed Source Current 2,5 | --- | --- | 24 | A | |
| V SD | Diode Forward Voltage 2 | V GS=0V , I S=1A , TJ =25 ℃ | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=10A , dI/dt=100A/µs , | --- | 37 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 27.3 | --- | nC |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BV DSS | Drain-Source Breakdown Voltage | V GS=0V , I D=250uA | 100 | --- | --- | V |
| △BV DSS/ △TJ | BVDSS Temperature Coefficient | Reference to 25 ℃ , ID=1mA | --- | 0.098 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance 2 | V GS=10V , ID=10A | --- | 93 | 112 | mΩ |
| V GS=4.5V , ID=8A | --- | 97 | 120 | mΩ | ||
| V GS(th) | Gate Threshold Voltage | 1.0 | --- | 2.5 | V | |
| △VGS(th) | V GS(th) Temperature Coefficient | --- | -4.57 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | V DS=80V , V GS=0V , TJ =25 ℃ | --- | --- | 1 | uA |
| V DS=80V , V GS=0V , TJ =55 ℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | V GS = ±20V , V DS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | V DS=5V , ID=10A | --- | 13 | --- | S |
| Rg | Gate Resistance | V DS=0V , V GS=0V , f=1MHz | --- | 2 | --- | Ω |
| Qg | Total Gate Charge (10V) | --- | 26.2 | --- | ||
| Qgs | Gate-Source Charge | --- | 4.6 | --- | ||
| Qgd | Gate-Drain Charge | --- | 5.1 | --- | ||
| Td(on) | Turn-On Delay Time |
V DD=50V , V GS=10V , RG=3.3 ID=10A | --- | 4.2 | --- |
ns |
| Tr | ||||||
| Td(off) | Turn-Off Delay Time | --- | 35.6 | --- | ||
| Tf | Fall Time | --- | 9.6 | --- | ||
| Ciss | Input Capacitance | --- | 1535 | --- | ||
| Coss | Output Capacitance | --- | 60 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 37 | --- | ||
| IS | Continuous Source Current 1,5 | V G=VD=0V , Force Current | --- | --- | 12 | A |
| ISM | Pulsed Source Current 2,5 | --- | --- | 24 | A | |
| V SD | Diode Forward Voltage 2 | V GS=0V , I S=1A , TJ =25 ℃ | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=10A , dI/dt=100A/µs , | --- | 37 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 27.3 | --- | nC |
Note :
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=11A
4.The power dissipation is limited by 150 ℃ junction temperature
5 .The data is theoretically the same as IDand IDM , in real applications , should be limited by total power dissipation.
Attention
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