Active Member
|
[China]
Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
Contact name:David Lee
Shenzhen Hua Xuan Yang Electronics Co.,Ltd |
|
|
Highest Performance Mosfet Power Transistor With Extreme High Cell Density
Mosfet Power Transistor Feature Description
It is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.
40V/12A
R DS(ON) = 13mΩ(typ.)@V GS = 10V
R DS(ON) = 16mΩ(typ.)@V GS = 4.5V
100%Avalanche Tested
Reliable and Rugged
Halogen Free and Green DevicesAvailable
(RoHSCompliant)
Mosfet Power Transistor Applications
PowerManagement forDC/DC
Switching Application
Battery Protection
Ordering and Marking Information
S
HXY1404
YYXXXJWW G
Package Code
S: SOP-8L
Date Code Assembly Material
YYXXX WW G:Halogen Free
Note: HUAYI lead-free products contain molding compounds/die attach
materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free
products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free
peak reflow temperature. HUAYI defines
“Green” to mean lead-free (RoHS compliant) and halogen free (Br or
Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm
by weight).
HUAYI reserves the right to make changes, corrections,
enhancements, modifications, and improvements to this pr-
oduct and/or to this document at any time without notice.
Absolute Maximum Ratings
Typical Operating Characteristics
