Active Member
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[China]
Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
Contact name:David Lee
Shenzhen Hua Xuan Yang Electronics Co.,Ltd |
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5G03SIDF 30V N+P-Channel Enhancement Mode MOSFET
Description
The 5G03S/DF uses advanced trench
technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a
level shifted high side switch, and for a host of other
applications
General Features
N-Channel
VDS = 30V,ID =8A
RDS(ON) < 20m Ω@ VGS=10V
P-Channel
VDS = -30V,ID = -6.2A
RDS(ON) < -50mΩ@ VGS=-10V
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Package Marking and Ordering Information
Note :
1,Repetitive Rating : Pulsed width limited by maximum junction temperature.
2,VDD=25V,VGS=10V,L=0.1mH,IAS=17A.,RG=25 ,Starting TJ=25℃.
3,The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4,Essentially independent of operating temperature.
