Active Member
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[China]
Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
Contact name:David Lee
Shenzhen Hua Xuan Yang Electronics Co.,Ltd |
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AP50N10D Dual Mosfet Switch / 50A 100V TO-252 High Power Transistor
Dual Mosfet Switch applications
Switch Mode Power Supplies (SMPS)
Residential, commercial, architectural and street lighting
DC-DC converters
Motor control
Automotive applications
Dual Mosfet Switch Description:
The AP50N10D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V.
This device is suitable for use as a
Battery protection or in other Switching application.
Dual Mosfet Switch Features
VDS = 100V ID =50A
RDS(ON) < 25mΩ@ VGS=10V
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| AP50N10D | TO-252 | AP50N10D XXX YYYY | 2500 |
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
| Symbol | Parameter | Limit | Unit |
| VDS | Drain-Source Voltage | 100 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current-Continuous | 50 | A |
| I (100℃) | Drain Current-Continuous(TC=100℃) | 21 | A |
| IDM | Pulsed Drain Current | 70 | A |
| PD | Maximum Power Dissipation | 85 | W |
| Derating factor | 0.57 | W/℃ | |
| EAS | Single pulse avalanche energy (Note 5) | 256 | mJ |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 To 175 | ℃ |
| RθJC | Thermal Resistance, Junction-to-Case (Note 2) | 1.8 | ℃/W |
Electrical Characteristics (TC=25℃unless otherwise noted)
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V ID=250μA | 100 | - | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS=100V,VGS=0V | - | - | 1 | μA |
| IGSS | Gate-Body Leakage Current | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS,ID=250 μA | 1 | 3 | V | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=20A | - | 24 | 28 | mΩ |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=10A | - | 28 | 30 | mΩ |
| gFS | Forward Transconductance | VDS=5V,ID=10A | - | 15 | - | S |
| Clss | Input Capacitance | VDS=25V,VGS=0V, F=1.0MHz | - | 2000 | - | PF |
| Coss | Output Capacitance | - | 300 | - | PF | |
| Crss | Reverse Transfer Capacitance | - | 250 | - | PF | |
| td(on) | Turn-on Delay Time | VDD=50V,RL=5Ω VGS=10V,RGEN=3Ω | - | 7 | - | nS |
r t | Turn-on Rise Time | - | 7 | - | nS | |
| td(off) | Turn-Off Delay Time | - | 29 | - | nS | |
f t | Turn-Off Fall Time | - | 7 | - | nS | |
| Qg | Total Gate Charge | VDS=50V,ID=10A, VGS=10V | - | 39 | - | nC |
| Qgs | Gate-Source Charge | - | 8 | - | nC | |
| Qgd | Gate-Drain Charge | - | 12 | - | nC | |
| VSD | Diode Forward Voltage (Note 3) | VGS=0V,IS=20A | - | - | 1.2 | V |
S I | Diode Forward Current (Note 2) | - | - | - | 30 | A |
rr t | Reverse Recovery Time | TJ = 25°C, IF = 10A di/dt = 100A/μs(Note3) | - | 32 | - | nS |
| Qrr | Reverse Recovery Charge | - | 53 | - | nC | |
| ton | Forward Turn-On Time | Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) | ||||
Notes:
1,Repetitive Rating: Pulse width limited by maximum junction temperature.
2,Surface Mounted on FR4 Board, t ≤ 10 sec.
3,Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
4,Guaranteed by design, not subject to production
5,EAS Condition : Tj=25 ℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω, IAS=32A
Attention
1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.
2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.
3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.
4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.
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8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.
