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2SD965A Silicon Power Transistor Silicon Material Collector Current 600 MA

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

2SD965A Silicon Power Transistor Silicon Material Collector Current 600 MA

Country/Region china
City & Province shenzhen guangdong
Categories Solar Chargers
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Product Details

SOT-89-3L Plastic-Encapsulate Transistors 2SD965A 2SD965A

 

 

FEATURE
  • Audio amplifier
  • Flash unit of camera
  • Switching circuit

 

Marking :D965A

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
 

SymbolParameterValueUnit
VCBOCollector-Base Voltage-60V
VCEOCollector-Emitter Voltage-60V
VEBOEmitter-Base Voltage-4V
ICCollector Current-500mA
PCCollector Power Dissipation225mW
RΘJAThermal Resistance From Junction To Ambient556℃/W
TjJunction Temperature150
TstgStorage Temperature-55~+150

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=0.1mA, IE=040  V
Collector-emitter breakdown voltageV(BR)CEOIC= 1mA. IB=030  V
Emitter-base breakdown voltageV(BR)EBOIE= 10μA, IC=07  V
Collector cut-off currentICBOVCB= 10V,IE=0  0.1μA
Emitter cut-off currentIEBOVEB=7V, IC=0  0.1μA

 
 

DC current gain

hFE(1)VCE= 2 V, IC=1mA 200  
 hFE’(2)VCE= 2V, IC = 500mA230 800 
 hFE(3)VCE= 2V, IC =2A150   
Collector-emitter saturation voltageVCE(sat)IC=3A, IB=0.1A  1V
Transition frequencyfTVCE=6V, IC=50mA 150 MHz
Out capacitanceCobVCB=20 V , IE=0, f=1MHZ  50pF

 
 
 
 

CLASSIFICATION OF hFE(2)

 

 

RankQRS
Range230-380340-600560-800

 
 
 

 

 Package Outline Dimensions
 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A0.9001.1500.0350.045
A10.0000.1000.0000.004
A20.9001.0500.0350.041
b0.3000.5000.0120.020
c0.0800.1500.0030.006
D2.8003.0000.1100.118
E1.2001.4000.0470.055
E12.2502.5500.0890.100
e0.950 TYP0.037 TYP
e11.8002.0000.0710.079
L0.550 REF0.022 REF
L10.3000.5000.0120.020
θ

 
 

 
 
 
SOT-89-3L Tape and Reel



 
 
 
 






















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