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[China]
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Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province
Contact name:Joan Tian
Reasunos Semiconductor Technology Co., Ltd. |
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High Frequency Silicon Carbide Metal-Oxide-Semiconductor for UPS Power Supply
Silicon Carbide MOSFETs, also known as Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), are advanced semiconductor devices that can provide superior performance and power efficiency in a wide range of applications. Made from silicon carbide (SiC), these Metal Oxide Semiconductor Field Effect Transistors are designed to offer low on resistance and high power performance.
This Silicon Carbide MOSFET is produced on a national military standard production line, ensuring the process is stable and the quality is reliable. It also provides a number of advantages, including low on resistance, high power, and superior performance in a wide range of applications. This product is designed to provide reliable and stable performance in power electronics, automotive, industrial, and other applications.
With its low on-resistance and high power performance, Silicon Carbide MOSFET makes it an ideal solution for power electronics, automotive, industrial, and other applications. Its advanced technology, based on national military standard production line, ensures process stability and quality reliability.
| Parameter | Value |
|---|---|
| Device Type | Metal-Oxide-Semiconductor (MOS) Field Effect Transistor (FET) |
| Material | Silicon Carbide (SiC) |
| Type | N |
| Product Name | Silicon Carbide MOSFET |
| Application | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. |
| Frequency | High Frequency |
| Power | High Power |
| Efficiency | High Efficiency |
| Advantages | Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable |
| Resistance | Low On Resistance |
Product name: Silicon Carbide MOSFET
Brand Name: REASUNOS
Place of Origin: Guangdong, CN
Material: Silicon Carbide
Device Type: MOSFET
Power: High Power
Resistance: Low On Resistance
Minimum Order Quantity: 600
Price: Confirm price based on product
Packaging Details: Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Delivery Time: 2-30 days (Depends on Total Quantity)
Payment Terms: 100% T/T in Advance(EXW)
Supply Ability: 5KK/month
REASUNOS Silicon Carbide Metal-Oxide-Semiconductor Field Effect Transistor (SiC MOSFET) is a high power, low on resistance MOSFET with superior performance and reliability. It is designed for use in a wide range of applications, such as motor control, power conversion, renewable energy, and automotive.
REASUNOS SiC MOSFETs are capable of handling high current and high temperature operations, thanks to their superior thermal performance and low gate capacitance. They also exhibit low gate charge and fast switching speed, which makes them ideal for high-frequency switching applications. Furthermore, their low on-state resistance and superior ruggedness makes them suitable for demanding power conversion applications.
REASUNOS Silicon Carbide MOSFETs are manufactured with advanced techniques and high quality materials, ensuring reliable performance and long-term reliability. They are available in various packages and sizes, with a wide range of power ratings, making them suitable for a variety of applications.
We are committed to providing you with the highest quality Silicon Carbide MOSFET products and services. Our experienced technical support team is here to provide you with the help and advice you need to get the most out of your Silicon Carbide MOSFETs.
We provide comprehensive technical support and services for all our products, including:
We also provide ongoing support and maintenance services, such as:
If you have any questions or need assistance with any of our products, please don’t hesitate to contact us.
Silicon Carbide MOSFETs are sensitive to ESD and can be damaged during shipping if not properly packaged. Therefore, proper packaging and shipping is essential for Silicon Carbide MOSFETs.
Silicon Carbide MOSFETs should be individually packaged in antistatic, electrostatic-shielding material. This material must be capable of dissipating any static charge that may build up during transport. The packaging should also be sealed with a tamper-evident seal to ensure that the product has not been opened or tampered with.
Silicon Carbide MOSFETs should be shipped via a reliable carrier that offers tracking and delivery confirmation. The package should be marked with a “Fragile” sticker to indicate that extra care should be taken in handling the package. Additionally, an antistatic package liner should be used to prevent electrostatic discharge.
