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QS6M4TR Field Effect Transistor Transistors FETs MOSFETs Arrays

KZ TECHNOLOGY (HONGKONG) LIMITED

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QS6M4TR Field Effect Transistor Transistors FETs MOSFETs Arrays

Country/Region china
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Product Details

QS6M4TR Specifications

Part StatusActive
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V, 20V
Current - Continuous Drain (Id) @ 25°C1.5A
Rds On (Max) @ Id, Vgs230 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs1.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds80pF @ 10V
Power - Max1.25W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageTSMT6 (SC-95)
ShipmentUPS/EMS/DHL/FedEx Express.
CondtionNew original factory.

QS6M4TR Packaging

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