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NGTB10N60R2DT4G IGBT Power Module Transistors IGBTs Single

KZ TECHNOLOGY (HONGKONG) LIMITED

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NGTB10N60R2DT4G IGBT Power Module Transistors IGBTs Single

Country/Region china
Categories Switching Power Supply
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Product Details

NGTB10N60R2DT4G Specifications

Part StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 10A
Power - Max72W
Switching Energy412µJ (on), 140µJ (off)
Input TypeStandard
Gate Charge53nC
Td (on/off) @ 25°C48ns/120ns
Test Condition300V, 10A, 30 Ohm, 15V
Reverse Recovery Time (trr)90ns
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK
ShipmentUPS/EMS/DHL/FedEx Express.
CondtionNew original factory.

NGTB10N60R2DT4G Packaging

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