MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors

Quick Detail:

MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors

Description:

Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of

these devices make them ideal for large - signal, common - source amplifier

applications in 28 volt base station equipment.

• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts,

IDQ = 350 mA, Pout = 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 22.7 dB

Drain Efficiency — 32%

ACPR @ 750 kHz Offset — -47 dBc @ 30 kHz Bandwidth

Applications:

GSM EDGE Application

• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA,

Pout = 16 Watts Avg., Full Frequency Band (921-960 MHz)

Power Gain — 20 dB

Drain Efficiency — 46%

Spectral Regrowth @ 400 kHz Offset = -62 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM — 1.5% rms

GSM Application

• Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts,

Full Frequency Band (921-960 MHz)

Power Gain — 20 dB

Drain Efficiency — 68%

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Integrated ESD Protection

• N Suffix Indicates Lead-Free Terminations

• 200°C Capable Plastic Package

• TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

13 inch Reel.

• TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

13 inch Reel.

Specifications:

Competitive Advantage:

Warranty :180days for all goods

Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.

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MRF6S9045NR1,MRF6S9045NBR1,MRF6S9045MR1,MRF6S9045MBR1