Results formbe inas substratefrom 25 Products.
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2-4inch Gallium antimonide GaSb Substrate Single Crystal Monocrystal for Semiconductor Indium arsenide InAs Substrate Single Crystal Monocrystal Semiconductor substrate Single ...
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P Type , InAs Substrate with (100),(111) Orientation , 3”, Dummy Grade PAM-XIAMEN provides single crystal InAs(Indium arsenide) wafer for infrared detectors, photovoltaic ...
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InAs wafer ( Indium Arsenide ) We provides InAs wafer ( Indium Arsenide ) to optoelectronics industry in diameter up to 2 inch . InAs crystal is a compound formed by 6N pure In and ...
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2inch diameter 50.8mm 500um thickness InAs substrates,Indium arsenide InAs crystal wafer, N-type 3inch 0.6mm InAs wafer,10x10mm square InAs wafers ---------------------------------...
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Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of ...
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2inch 3inch 4inch InAs Wafer Crystal Substrates N-Type For MBE 99.9999% Monocrystalline Introduce of InAs substrate Indium InAs or indium mono-arsenide is a semiconductor composed ...
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Undoped InAs Substrate , 2”, Test Grade -Indium Arsenide Wafer Supplier PAM-XIAMEN provides single crystal InAs(Indium arsenide) wafer for infrared detectors, photovoltaic ...
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Undoped InAs Substrate , 2”, Prime Grade , Epi Ready -InAs Wafer Manufacturer PAM-XIAMEN manufactures high purity single crystal Indium arsenide Wafers for optoelectronics ...
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P Type , Single Crystal InAs Substrate , 3”, Prime Grade PAM-XIAMEN manufactures high purity single crystal Indium arsenide Wafers for optoelectronics applications. Our standard ...
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InAs wafer ( Indium Arsenide ) We provides InAs wafer ( Indium Arsenide ) to optoelectronics industry in diameter up to 2 inch . InAs crystal is a compound formed by 6N pure In and ...
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2-4inch Gallium antimonide GaSb Substrate Single Crystal Monocrystal for Semiconductor InAsSb/In-AsPSb, InNAsSb and other heterojunction materials can be grown on InAs single ...
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32inch InAs wafers N-type un-doped type GaAs wafers GaSb Wafers Application InAs single crystal can be used as substrate material to grow InAsSb/InAsPSb, InNAsSb and other ...
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4'' 200nm AlScN Template On Silicon SSP DSP Epitaxial Substrates for LED Devices Features: Aluminum scandium nitride (AlScN) on silicon refers to the deposition of a thin AlScN on ...
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N Type , InAs( Indium Arsenide ) Substrate , 3”, Prime Grade PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical ...
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Undoped Indium Arsenide Substrate, 4”, Test Grade PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient ...
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P Type , InAs (Indium Arsenide) Wafer , 4”, Prime Grade PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical ...
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P Type , Zn-doped Single Crystal InAs Wafer , 2”, Test Grade PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical ...
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Undoped InAs Semiconductor Wafer , 3”, Prime Grade PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient ...
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Undoped Indium Arsenide Substrate, 4”, Prime Grade PAM-XIAMEN provides single crystal InAs(Indium arsenide) wafer for infrared detectors, photovoltaic photodiodes detectors, diode ...
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N Type , InAs( Indium Arsenide ) Substrate , 3”, Dummy Grade PAM-XIAMEN manufactures high purity single crystal Indium arsenide Wafers for optoelectronics applications. Our ...
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