Results forjoptec ggg wafers and substratesfrom 988 Products.
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3 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 3" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
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170W Heat Sink Industrial Custom Aluminum Nitride AlN Ceramic Plate The specification of the AlN Ceramic plate 1. We are supplying with many round ceramic wafers, square & ...
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4 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 4" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
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8 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 111 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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8 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 111 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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12 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 12" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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8 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 100 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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8 Inch Silicon Wafer FZ Intrinsic Undoped Orientation 100 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
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12 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 111 Prime Grade 12" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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4 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 111 Prime Grade 4" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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3 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 100 Prime Grade 3" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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2 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 111 Prime Grade 2" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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12" Dummy Grade / Mechanical Grade Silicon Wafer DSP Thickness 650-700/700-750/750μm No Scratch Films Etch Patterns PAM-XIAMEN develops advanced crystal growth and epitaxy ...
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6 Inch Silicon Wafer CZ N Type Antimony Doped Orientation 100 Ultra Thickness 290±20um Prime 6" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the ...
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8 Inch Silicon Wafer CZ P Type Phosphorus Doped Orientation 100 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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6 Inch CZ Prime Silicon Wafer With One Side Sputtering Cr / Au Layer Thickness 10nm/50nm 6" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the ...
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6 Inch Silicon Wafer CZ P Type Boron Doped Orientation 111 Prime Grade 6" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
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6 Inch Silicon Wafer CZ P Type Boron Doped Orientation 100 Prime Grade 6" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
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(20-2-1) Plane N-GaN Freestanding GaN Substrate With Low Dislocation Density PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate ...
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A Plane Si-Doped GaN Freestanding Hexagonal GaN Crystal Substrate PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer ...
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