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Ge single crystal substrate

KINHENG CRYSTAL MATERIAL(SHANGHAI) CO., LTD

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Ge single crystal substrate

City & Province Shanghai Shanghai
Categories Abrasives
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Product Details

 

Major capability parameter
Growth method
Czochralski method
Crystal structure
M3
Unit cell constant
a=5.65754 Å
Density
5.323g/cm3
Melt point
937.4℃
Doped material
No doped
Sb-doped
In / Ga –doped
Type
/
N
P
Resistivity
>35Ωcm
0.05Ωcm
0.05~0.1Ωcm
EPD
<4×103∕cm2
<4×103∕cm2
<4×103∕cm2
Size
10x3,10x5,10x10,15x15,,20x15,20x20,
dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
Thickness
0.5mm,1.0mm
Polishing
Single or double
Crystal orientation
<100>,<110>,<111>,±0.5º
Ra:
≤5Å(5µm×5µm)
Pack
100 clean bag,1000 exactly clean bag

 

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