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Address: Room605, Wanda Plaza, Lane 4995, Gonghexin Rd, shanghai, China, 200082.
Phone: 86-21-60490170
Contact name:Ms. Wu
KINHENG CRYSTAL MATERIAL(SHANGHAI) CO., LTD |
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The maximum of the broad emission situated at 550nm which allows Si-photodiodes to be used to detect the emission. The use of a scintillator-photodiode pair makes it possible to diminish significantly the size of the detecting system (due to the use of photodiode instead of PMT), to do without high-voltage supply source, and to use detecting systems in magnetic fields. The high radiation resistance (up to 102Gy) allows CsI(TI) to be used in nuclear, medium, radiation detection and high-energy physics etc. Special treatment ensures obtaining of CsI(TI) scintillators with a low afterglow (less than 0.1% after 5 ms) for the use in safety inspection and imaging.
So far we can offer Czochralski method and Bridgman growth crystals to meet different application, it's widely used in High energy physics, radiation detection and medical& safety inspection imaging.
Properties:
Density [g/cm3] | 4.51 |
Melting point [K] | 894 |
Thermal expansion coefficient [K-1] | 54 x 10-6 |
Cleavage plane | none |
Hardness (Mho) | 2 |
Hygroscopic | Slightly |
Wavelength of emission maximum [nm] | 550 |
Lower wavelength cutoff [nm] | 320 |
Refractive index at emission maximum | 1.79 |
Primary decay time [µs] | 1 |
Afterglow (after 6ms) [%] | 0.5 - 5.0 |
Light yield [photons/MeVγ] | 52- 56 x103 |
Photoelectron yield [% of NaI(Tl)] (y rays) | 45 |
