SST39VF1601C-70-4I-EKE IC FLASH 16MBIT PARALLEL 48TSOP Microchip Technology

 

Product Description

The SST39VF1601C and SST39VF1602C devices are 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160xC writes (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.
Featuring high performance Word-Program, the SST39VF1601C/1602C devices provide a typical Word-Program time of 7 µsec. These devices use Toggle Bit, Data# Polling, or the RY/BY# pin to indi cate the completion of Program operation. To protect against inadvertent write, they have on-chip hard ware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.

 

 

Features

• Organized as 1M x16: SST39VF1601C/1602C
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode: 3 µA (typical)
• Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 8 KWord)
– Bottom Block-Protection (bottom 8 KWord)
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Flexible block architecture; one 8-, two 4-, one 16-, and thirty one 32-KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Latched Address and Data
• Security-ID Feature
– SST: 128 bits; User: 128 words
• Fast Read Access Time:
– 70 ns
• Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 µs (typical)
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bits
– Data# Polling
– Ready/Busy# Pin
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)
– 48-ball WFBGA (4mm x 6mm)
• All devices are RoHS compliant