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AS4C16M16D1-5BCN IC DRAM 256MBIT PAR 60TFBGA Alliance Memory, Inc.

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Address: No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China

Contact name:Lin

Shenzhen Sanhuang Electronics Co.,Ltd.

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AS4C16M16D1-5BCN IC DRAM 256MBIT PAR 60TFBGA Alliance Memory, Inc.

Country/Region	china
City & Province	shenzhen
Categories	Electric Power Tools

Product Details

Features

• Organization: 1,048,576 words × 4 bits
• High speed
- 40/50/60/70 ns RAS access time
- 20/25/30/35 ns column address access time
- 10/13/15/18 ns CAS access time
• Low power consumption
- Active: 385 mW max (-60)
- Standby: 5.5 mW max, CMOS I/O
• Fast page mode (AS4C14400) or EDO (AS4C14405)
• 1024 refresh cycles, 16 ms refresh interval
- RAS-only or CAS-before-RAS refresh
• Read-modify-write
• TTL-compatible, three-state I/O
• JEDEC standard packages
- 300 mil, 20/26-pin SOJ
- 300 mil, 20/26-pin TSOP
• Single 5V power supply
• ESD protection ≥ 2001V
• Latch-up current ≥ 200 mA

Specifications

Attribute	Attribute Value
Manufacturer	Alliance Memory, Inc.
Product Category	Memory ICs
Series	AS4C16M16D1
Type	DDR1
Packaging	Tray Alternate Packaging
Mounting-Style	SMD/SMT
Package-Case	60-TFBGA
Operating-Temperature	0°C ~ 70°C (TA)
Interface	Parallel
Voltage-Supply	2.3 V ~ 2.7 V
Supplier-Device-Package	60-TFBGA (13x8)
Memory Capacity	256M (16M x 16)
Memory-Type	DDR SDRAM
Speed	200MHz
Access-Time	0.7 ns
Format-Memory	RAM
Maximum Operating Temperature	+ 70 C
Operating temperature range	0 C
Organization	16 M x 16
Supply-Current-Max	135 mA
Data-Bus-Width	16 bit
Supply-Voltage-Max	2.7 V
Supply-Voltage-Min	2.3 V
Package-Case	TFBGA-60
Maximum-Clock-Frequency	200 MHz