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S29GL512S10GHI020 IC FLASH 512MBIT PARALLEL 56FBGA Infineon Technologies

Shenzhen Sanhuang Electronics Co.,Ltd.

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Address: No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China

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S29GL512S10GHI020 IC FLASH 512MBIT PARALLEL 56FBGA Infineon Technologies

Country/Region china
City & Province shenzhen
Categories Fuses
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Product Details

Specifications

AttributeAttribute Value
Manufacturer
Product CategoryMemory ICs
SeriesGL-S
PackagingTray
Mounting-StyleSMD/SMT
Operating-Temperature-Range- 40 C to + 85 C
Package-Case*
Operating-Temperature-40°C ~ 85°C (TA)
InterfaceParallel
Voltage-Supply2.7 V ~ 3.6 V
Supplier-Device-Package*
Memory Capacity512M (32M x 16)
Memory-TypeFLASH - NOR
Speed100ns
ArchitectureMirrorBit Eclipse
Format-MemoryFLASH
StandardCommon Flash Interface (CFI)
Interface-TypeParallel
Organization64 M x 8
Supply-Current-Max100 mA
Data-Bus-Width8 bit
Supply-Voltage-Max3.6 V
Supply-Voltage-Min2.7 V
Package-CaseFBGA-56
Timing-TypeAsynchronous

Descriptions

FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 100ns 56-Fortified BGA (9x7)
NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 100ns 56-Pin Fortified BGA Tray
Flash Memory

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