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IS41LV16100B-50KL IC DRAM 16MBIT PARALLEL 42SOJ ISSI, Integrated Silicon Solution Inc

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IS41LV16100B-50KL IC DRAM 16MBIT PARALLEL 42SOJ ISSI, Integrated Silicon Solution Inc

Country/Region	china
City & Province	shenzhen
Categories	Electric Power Tools

Product Details

DESCRIPTION

TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

FEATURES

• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
— RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial Temperature Range: -40oC to +85oC
• Lead-free available

Specifications

Attribute	Attribute Value
Manufacturer	ISSI
Product Category	IC Chips
Series	-
Packaging	Tube
Package-Case	42-BSOJ (0.400", 10.16mm)
Operating-Temperature	0°C ~ 70°C (TA)
Interface	Parallel
Voltage-Supply	3 V ~ 3.6 V
Supplier-Device-Package	42-SOJ
Memory Capacity	16M (1M x 16)
Memory-Type	DRAM - EDO
Speed	50ns
Format-Memory	RAM