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Integrated Circuit Chip AIMBG120R060M1 33A Silicon Carbide MOSFET Transistors TO-263-7
Description of AIMBG120R060M1
AIMBG120R060M1 is 1200V SiC Mosfet for Automotive family has
been developed for current and future On-Board Charger and DC-DC
applications in hybrid and electric vehicles.
Built on a state-of-the-art SiC trench technology combined with .XT
interconnection technology the silicon carbide mosfet is
specifically designed to meet the high requirements demanded by the
automotive industry with regards to reliability, quality and
performance.
The compact SMD housing D²PAK (PG-TO263-7) enables a high degree of
automation at the customer manufacturing facility and further
reduces cost on system level.
Specification Of AIMBG120R060M1
Ciss | 605 pF |
Coss | 30 pF |
Operating Temperature min max | -55 °C 175 °C |
Ptot (@ TA=25°C) max | 175 W |
QG | 25 nC |
RDS (on) (@ Tj = 25°C) | 60 mΩ |
RthJC max | 1 K/W |
Features of AIMBG120R060M1
FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our
purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample
free?
A:Yes,we support sample order and small order.Sample cost is
different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also
use your suggested forwarder.Products will be in good packing and
ensure the safety and we are responsible to product damage to your
order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we
will confirm lead time for you based on your order quantity.