Integrated Circuit Chip TW070J120B,S1Q N-Channel MOSFETs Transistors TO-3P-3

Integrated Circuit Chip TW070J120B,S1Q N-Channel MOSFETs Transistors TO-3P-3​

Product Description Of TW070J120B,S1Q

TW070J120B,S1Q is Silicon Carbide N-Channel MOS Transistors, Through Hole TO-3P(N).

Specification Of TW070J120B,S1Q

Features Of TW070J120B,S1Q​

• Enhancement mode
• Chip design of 2nd generation (Built-in SiC schottky barrier diode)
• Low diode forward voltage: VDSF = -1.35 V (typ.)
• High voltage: VDSS = 1200 V
• Low drain-source on-resistance: RDS(ON) = 70 mΩ (typ.)
• Less susceptible to malfunction due to high threshold voltage: Vth = 4.2 to 5.8 V (VDS = 10 V, I D = 20 mA)

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FAQ

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A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
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Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.